The local metallicity of gadolinium doped compound semiconductors

The local metallicities of Hf0.97Gd0.03O2, Ga0.97Gd0.03N, Eu0.97Gd0.04O and EuO films were studied through a comparison of the findings from constant initial state spectroscopy using synchrotron light. Resonant enhancements, corresponding to the 4d → 4f transitions of Eu and Gd, were observed in som...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of physics. Condensed matter 2012-11, Vol.24 (44), p.445801-445801
Hauptverfasser:	Colón Santana, J A, Liu, Pan, Wang, Xianjie, Tang, J, McHale, S R, Wooten, D, McClory, J W, Petrosky, J C, Wu, J, Palai, R, Losovjy, Ya B, Dowben, P A
Format:	Artikel
Sprache:	eng
Schlagworte:	Clean metal, semiconductor, and insulator surfaces Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Constants Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Gadolinium Metallicity Photoemission Photoemission and photoelectron spectra Physics Screening Semiconductors Synchrotrons
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!