Extremely anisotropic single-crystal growth in nanotwinned copper

By electroplating of nearly unidirectionally -oriented nanotwinned and fine-grained Cu on a Si wafer surface followed by annealing at 400–500 °C for up to 1 h, we grew many extremely large -oriented single crystals of Cu with sizes ranging from 200 to 400 μm. By patterning and annealing the nanotwin...

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Veröffentlicht in:	NPG Asia materials 2014-10, Vol.6 (10), p.e135-e135
Hauptverfasser:	Lu, Chia-Ling, Lin, Han-Wen, Liu, Chien-Min, Huang, Yi-Sa, Lu, Tien-Lin, Liu, Tao-Chi, Hsiao, Hsiang-Yao, Chen, Chih, Kuo, Jui-Chao, Tu, King-Ning
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/1005/1007 Anisotropy Annealing ANNEALING PROCESSES Arrays Biomaterials Chemistry and Materials Science Copper CRYSTAL GROWTH ELECTROPLATING Energy Systems INTEGRATED CIRCUITS Materials Science MICROSTRUCTURES Nanostructure Optical and Electronic Materials original-article Silicon Single crystals Structural Materials Surface and Interface Science Thin Films TWINNING MECHANISMS
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