Inhomogeneous Carrier Transport at Contact/GaN Interfaces and Thermal Instability of Vertical Light-Emitting Diodes

The carrier-transport behavior at the interface of a contact and n-type GaN was investigated for group III nitride vertical light-emitting diodes (LEDs). Three types of samples were investigated including dry-etched flat Ga-polar n-GaN (GA), dry-etched flat N-polar n-GaN (NF), and wet-etched roughen...

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Veröffentlicht in:	ACS applied materials & interfaces 2014-11, Vol.6 (21), p.18673-18682
Hauptverfasser:	Choi, Yunju, Jung, Eunjin, Kim, Yangsoo, Oh, Sejong, Yoo, Myung-Cheol, Kim, Hyunsoo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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