Formamide Mediated, Air-Brush Printable, Indium-Free Soluble Zn–Sn–O Semiconductors for Thin-Film Transistor Applications

In this study, for high-performance indium-free metal oxide channel layer, we synthesize Zn–Sn–O (ZTO) precursor solutions in which formamide is incorporated as an additive for catalyzing the subsequent sol–gel reactions and the evolution of chemical structure. It is revealed that the formamide play...

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Veröffentlicht in:	ACS applied materials & interfaces 2014-11, Vol.6 (21), p.18429-18434
Hauptverfasser:	Kim, Seong Jip, Jeon, Hye-Ji, Oh, Sang-Jin, Lee, Sun Sook, Choi, Youngmin, Park, Jin-Seong, Jeong, Sunho
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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