Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

The size of silicon nanowires (SiNWs) is crucial for their future application in the assembly of field emission (FE) devices. Ag-assisted chemical etching combined with PS sphere as template was employed to prepare size-controllable single crystal SiNWs with uniformity, and the diameter could be fur...

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Veröffentlicht in:	RSC advances 2014-01, Vol.4 (60), p.31729-31734
Hauptverfasser:	Lv, Shasha, Li, Zhengcao, Su, Shiming, Lin, Linhan, Zhang, Zhengjun, Miao, Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Density Devices Electric fields Field emission Finite element method Nanowires Proximity Silicon
Online-Zugang:	Volltext
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