Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity
The size of silicon nanowires (SiNWs) is crucial for their future application in the assembly of field emission (FE) devices. Ag-assisted chemical etching combined with PS sphere as template was employed to prepare size-controllable single crystal SiNWs with uniformity, and the diameter could be fur...
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| Veröffentlicht in: | RSC advances 2014-01, Vol.4 (60), p.31729-31734 |
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| creator | Lv, Shasha Li, Zhengcao Su, Shiming Lin, Linhan Zhang, Zhengjun Miao, Wei |
| description | The size of silicon nanowires (SiNWs) is crucial for their future application in the assembly of field emission (FE) devices. Ag-assisted chemical etching combined with PS sphere as template was employed to prepare size-controllable single crystal SiNWs with uniformity, and the diameter could be further reduced
via
dry oxidation. The FE properties were found to be strongly influenced by dimensionality and surface geometry structures, and improved progressively with the increase of proximity. The best FE properties were observed in the SiNWs with a tip size of ∼180 nm (period 1000 nm) and a length of 3.2 μm. They showed a low turn-on field of 1.8 V μm
−1
and a high current density of 0.75 mA cm
−2
at an electric field of 2.5 V μm
−1
. The emission current as a function of time test also demonstrated the good robustness of the SiNWs. The enhanced field emitting efficiency is attributed to the large space between neighboring nanowires, enhanced surface roughness and the sharp tips as hot emission spots. |
| doi_str_mv | 10.1039/C4RA04440A |
| format | Article |
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via
dry oxidation. The FE properties were found to be strongly influenced by dimensionality and surface geometry structures, and improved progressively with the increase of proximity. The best FE properties were observed in the SiNWs with a tip size of ∼180 nm (period 1000 nm) and a length of 3.2 μm. They showed a low turn-on field of 1.8 V μm
−1
and a high current density of 0.75 mA cm
−2
at an electric field of 2.5 V μm
−1
. The emission current as a function of time test also demonstrated the good robustness of the SiNWs. The enhanced field emitting efficiency is attributed to the large space between neighboring nanowires, enhanced surface roughness and the sharp tips as hot emission spots.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/C4RA04440A</identifier><language>eng</language><subject>Density ; Devices ; Electric fields ; Field emission ; Finite element method ; Nanowires ; Proximity ; Silicon</subject><ispartof>RSC advances, 2014-01, Vol.4 (60), p.31729-31734</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c264t-d58612a4a32906213226b26c62390d42eb3fa8454931cbbff066db19ab2f7dbf3</citedby><cites>FETCH-LOGICAL-c264t-d58612a4a32906213226b26c62390d42eb3fa8454931cbbff066db19ab2f7dbf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids></links><search><creatorcontrib>Lv, Shasha</creatorcontrib><creatorcontrib>Li, Zhengcao</creatorcontrib><creatorcontrib>Su, Shiming</creatorcontrib><creatorcontrib>Lin, Linhan</creatorcontrib><creatorcontrib>Zhang, Zhengjun</creatorcontrib><creatorcontrib>Miao, Wei</creatorcontrib><title>Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity</title><title>RSC advances</title><description>The size of silicon nanowires (SiNWs) is crucial for their future application in the assembly of field emission (FE) devices. Ag-assisted chemical etching combined with PS sphere as template was employed to prepare size-controllable single crystal SiNWs with uniformity, and the diameter could be further reduced
via
dry oxidation. The FE properties were found to be strongly influenced by dimensionality and surface geometry structures, and improved progressively with the increase of proximity. The best FE properties were observed in the SiNWs with a tip size of ∼180 nm (period 1000 nm) and a length of 3.2 μm. They showed a low turn-on field of 1.8 V μm
−1
and a high current density of 0.75 mA cm
−2
at an electric field of 2.5 V μm
−1
. The emission current as a function of time test also demonstrated the good robustness of the SiNWs. The enhanced field emitting efficiency is attributed to the large space between neighboring nanowires, enhanced surface roughness and the sharp tips as hot emission spots.</description><subject>Density</subject><subject>Devices</subject><subject>Electric fields</subject><subject>Field emission</subject><subject>Finite element method</subject><subject>Nanowires</subject><subject>Proximity</subject><subject>Silicon</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpNkE9LAzEQxYMoWGovfoIcRVhNJmlsjqX4DwqC1POS7CYaSZM1SVn77U2poHOZ4fHjDe8hdEnJDSVM3q7465JwzsnyBE2AcNEAEfL0332OZjl_kjpiTkHQCQqbXVDaG2yd8T02W5eziwEPKQ4mFWcyjhaPxvtGefceTI-z866rSFAhji5VYnTlA1eppOh9JVQeTFdwUsVFrEJ_cPt2W1f2F-jMKp_N7HdP0dvD_Wb11KxfHp9Xy3XTgeCl6ecLQUFxxUASAZQBCA2iE8Ak6TkYzaxa8DmXjHZaW0uE6DWVSoO967VlU3R19K2fv3Yml7YG62oKFUzc5ZYKIESCXEBFr49ol2LOydh2SG6r0r6lpD302v71yn4ANb9sDQ</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Lv, Shasha</creator><creator>Li, Zhengcao</creator><creator>Su, Shiming</creator><creator>Lin, Linhan</creator><creator>Zhang, Zhengjun</creator><creator>Miao, Wei</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140101</creationdate><title>Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity</title><author>Lv, Shasha ; Li, Zhengcao ; Su, Shiming ; Lin, Linhan ; Zhang, Zhengjun ; Miao, Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c264t-d58612a4a32906213226b26c62390d42eb3fa8454931cbbff066db19ab2f7dbf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Density</topic><topic>Devices</topic><topic>Electric fields</topic><topic>Field emission</topic><topic>Finite element method</topic><topic>Nanowires</topic><topic>Proximity</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lv, Shasha</creatorcontrib><creatorcontrib>Li, Zhengcao</creatorcontrib><creatorcontrib>Su, Shiming</creatorcontrib><creatorcontrib>Lin, Linhan</creatorcontrib><creatorcontrib>Zhang, Zhengjun</creatorcontrib><creatorcontrib>Miao, Wei</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lv, Shasha</au><au>Li, Zhengcao</au><au>Su, Shiming</au><au>Lin, Linhan</au><au>Zhang, Zhengjun</au><au>Miao, Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity</atitle><jtitle>RSC advances</jtitle><date>2014-01-01</date><risdate>2014</risdate><volume>4</volume><issue>60</issue><spage>31729</spage><epage>31734</epage><pages>31729-31734</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>The size of silicon nanowires (SiNWs) is crucial for their future application in the assembly of field emission (FE) devices. Ag-assisted chemical etching combined with PS sphere as template was employed to prepare size-controllable single crystal SiNWs with uniformity, and the diameter could be further reduced
via
dry oxidation. The FE properties were found to be strongly influenced by dimensionality and surface geometry structures, and improved progressively with the increase of proximity. The best FE properties were observed in the SiNWs with a tip size of ∼180 nm (period 1000 nm) and a length of 3.2 μm. They showed a low turn-on field of 1.8 V μm
−1
and a high current density of 0.75 mA cm
−2
at an electric field of 2.5 V μm
−1
. The emission current as a function of time test also demonstrated the good robustness of the SiNWs. The enhanced field emitting efficiency is attributed to the large space between neighboring nanowires, enhanced surface roughness and the sharp tips as hot emission spots.</abstract><doi>10.1039/C4RA04440A</doi><tpages>6</tpages></addata></record> |
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| ispartof | RSC advances, 2014-01, Vol.4 (60), p.31729-31734 |
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| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Density Devices Electric fields Field emission Finite element method Nanowires Proximity Silicon |
| title | Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity |
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