Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology
In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I–f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and...
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Veröffentlicht in: | IET circuits, devices & systems devices & systems, 2014-07, Vol.8 (4), p.291-300 |
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creator | De Marcellis, Andrea Cubells-Beltrán, María-Dolores Reig, Candid Madrenas, Jordi Zadov, Boris Paperno, Eugene Cardoso, Susana Freitas, Paulo P |
description | In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I–f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level simulations for integration in Austria Microsystems 0.35 μm technology have been corroborated by means of experimental measurements with the help of printed circuit board prototypes and real GMR devices. Tables with relevant parameters (silicon area, power consumption, sensitivity etc.) have been constructed as practical tools for designers. Electric currents down to 2 μA have been resolved in this way. |
doi_str_mv | 10.1049/iet-cds.2013.0348 |
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This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level simulations for integration in Austria Microsystems 0.35 μm technology have been corroborated by means of experimental measurements with the help of printed circuit board prototypes and real GMR devices. Tables with relevant parameters (silicon area, power consumption, sensitivity etc.) have been constructed as practical tools for designers. Electric currents down to 2 μA have been resolved in this way.</description><identifier>ISSN: 1751-858X</identifier><identifier>ISSN: 1751-8598</identifier><identifier>EISSN: 1751-8598</identifier><identifier>DOI: 10.1049/iet-cds.2013.0348</identifier><language>eng</language><publisher>Stevenage: The Institution of Engineering and Technology</publisher><subject>Applied sciences ; Austria Microsystems technology ; Boards ; Circuit boards ; Circuits integrats ; CMOS ; CMOS integrated circuits ; Conversion ; current measurement ; current-to-frequency conversion schemes ; Design ; Design. Technologies. Operation analysis. Testing ; Devices ; Digital systems ; Electric current ; electric current measurement ; electric current monitoring ; Electric currents ; Electrical junctions ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; electronic interfaces ; Electronics ; Enginyeria electrònica ; Exact sciences and technology ; Giant magnetoresistance ; giant magnetoresistance technology ; Hardware ; Input-output equipment ; integrated circuit measurement ; Integrated circuits ; Interface ; Low-power ; low-power electronics ; low-power integrated circuits ; Magnetic fields ; magnetic tunnel junctions ; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics ; Magnetoresistivity ; Microelectrònica ; Modulation ; Parameter sensitivity ; power consumption ; Power integrated circuits ; Power management ; printed circuit board prototypes ; printed circuits ; Proposals ; quasidigital front-ends ; Resistive sensors ; Roads & highways ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductors ; sensitivity ; Sensors ; silicon area ; size 0.35 mum ; spin valves ; standard complementary metal oxide semiconductor processes ; Transistors ; Tunnel junctions ; Wheatstone bridges ; Àrees temàtiques de la UPC</subject><ispartof>IET circuits, devices & systems, 2014-07, Vol.8 (4), p.291-300</ispartof><rights>The Institution of Engineering and Technology</rights><rights>2014 The Institution of Engineering and Technology</rights><rights>2015 INIST-CNRS</rights><rights>Copyright The Institution of Engineering & Technology Jul 2014</rights><rights>Copyright The Institution of Engineering & Technology 2014</rights><rights>Attribution-NonCommercial-NoDerivs 3.0 Spain info:eu-repo/semantics/openAccess <a href="http://creativecommons.org/licenses/by-nc-nd/3.0/es/">http://creativecommons.org/licenses/by-nc-nd/3.0/es/</a></rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c5724-a1ed20a5ec958efd146d7ffb7aed7e60bf0c446f3579973ccef72e14d04b877a3</citedby><cites>FETCH-LOGICAL-c5724-a1ed20a5ec958efd146d7ffb7aed7e60bf0c446f3579973ccef72e14d04b877a3</cites><orcidid>0000-0001-8029-0068</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1049%2Fiet-cds.2013.0348$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1049%2Fiet-cds.2013.0348$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,314,776,780,881,1411,11541,26951,27901,27902,45550,45551,46027,46451</link.rule.ids><linktorsrc>$$Uhttps://onlinelibrary.wiley.com/doi/abs/10.1049%2Fiet-cds.2013.0348$$EView_record_in_Wiley-Blackwell$$FView_record_in_$$GWiley-Blackwell</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28673614$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>De Marcellis, Andrea</creatorcontrib><creatorcontrib>Cubells-Beltrán, María-Dolores</creatorcontrib><creatorcontrib>Reig, Candid</creatorcontrib><creatorcontrib>Madrenas, Jordi</creatorcontrib><creatorcontrib>Zadov, Boris</creatorcontrib><creatorcontrib>Paperno, Eugene</creatorcontrib><creatorcontrib>Cardoso, Susana</creatorcontrib><creatorcontrib>Freitas, Paulo P</creatorcontrib><title>Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology</title><title>IET circuits, devices & systems</title><description>In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I–f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level simulations for integration in Austria Microsystems 0.35 μm technology have been corroborated by means of experimental measurements with the help of printed circuit board prototypes and real GMR devices. Tables with relevant parameters (silicon area, power consumption, sensitivity etc.) have been constructed as practical tools for designers. Electric currents down to 2 μA have been resolved in this way.</description><subject>Applied sciences</subject><subject>Austria Microsystems technology</subject><subject>Boards</subject><subject>Circuit boards</subject><subject>Circuits integrats</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>Conversion</subject><subject>current measurement</subject><subject>current-to-frequency conversion schemes</subject><subject>Design</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Digital systems</subject><subject>Electric current</subject><subject>electric current measurement</subject><subject>electric current monitoring</subject><subject>Electric currents</subject><subject>Electrical junctions</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>electronic interfaces</subject><subject>Electronics</subject><subject>Enginyeria electrònica</subject><subject>Exact sciences and technology</subject><subject>Giant magnetoresistance</subject><subject>giant magnetoresistance technology</subject><subject>Hardware</subject><subject>Input-output equipment</subject><subject>integrated circuit measurement</subject><subject>Integrated circuits</subject><subject>Interface</subject><subject>Low-power</subject><subject>low-power electronics</subject><subject>low-power integrated circuits</subject><subject>Magnetic fields</subject><subject>magnetic tunnel junctions</subject><subject>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</subject><subject>Magnetoresistivity</subject><subject>Microelectrònica</subject><subject>Modulation</subject><subject>Parameter sensitivity</subject><subject>power consumption</subject><subject>Power integrated circuits</subject><subject>Power management</subject><subject>printed circuit board prototypes</subject><subject>printed circuits</subject><subject>Proposals</subject><subject>quasidigital front-ends</subject><subject>Resistive sensors</subject><subject>Roads & highways</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>sensitivity</subject><subject>Sensors</subject><subject>silicon area</subject><subject>size 0.35 mum</subject><subject>spin valves</subject><subject>standard complementary metal oxide semiconductor processes</subject><subject>Transistors</subject><subject>Tunnel junctions</subject><subject>Wheatstone bridges</subject><subject>Àrees temàtiques de la UPC</subject><issn>1751-858X</issn><issn>1751-8598</issn><issn>1751-8598</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><sourceid>XX2</sourceid><recordid>eNqFkW9rFDEQxhdRsFY_gO8WRNAXe06y2U3Wd3q2WiiIWMF3IZdMtil7mzPJUu7bm3DlLOIfSMiE_J7JzDxV9ZzAigAb3jhMjTZxRYG0K2iZeFCdEN6RRnSDeHiMxffH1ZMYbwC6rmv7k8p_WVR0jXGjS2qqbfBzanA2sbY-1HoJAedUb1HFJeC2xG7OK-EYVEJTaxf04lKsb126rkenCq3GGZMPGF1MatZYJ9TXs5_8uH9aPbJqivjs7jytvp2fXa0_NZefP16s3102uuOUNYqgoaA61EMn0BrCesOt3XCFhmMPGwuasd62HR8G3mqNllMkzADbCM5Ve1qRQ14dFy0DagxaJemV-3UpmwKnkjKgg8iaVwfNLvgfC8Ykty5qnCY1o1-iJD0FELwVQ0Zf_Ibe-CXMuSPZwkApz-Pt_0WR_A4if87vlRp8jAGt3AW3VWEvCchirszmymyuLObKYm7WvLzLrKJWkw15zC4ehVT0vO0Jy9zbA3frJtz_P7Fcf_hK358DAC_i1wdxwY6VX5xdFeqeZmdsZps_sH9v4CcAtNXk</recordid><startdate>201407</startdate><enddate>201407</enddate><creator>De Marcellis, Andrea</creator><creator>Cubells-Beltrán, María-Dolores</creator><creator>Reig, Candid</creator><creator>Madrenas, Jordi</creator><creator>Zadov, Boris</creator><creator>Paperno, Eugene</creator><creator>Cardoso, Susana</creator><creator>Freitas, Paulo P</creator><general>The Institution of Engineering and Technology</general><general>Institution of Engineering and Technology</general><general>John Wiley & Sons, Inc</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>S0W</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><scope>XX2</scope><orcidid>https://orcid.org/0000-0001-8029-0068</orcidid></search><sort><creationdate>201407</creationdate><title>Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology</title><author>De Marcellis, Andrea ; Cubells-Beltrán, María-Dolores ; Reig, Candid ; Madrenas, Jordi ; Zadov, Boris ; Paperno, Eugene ; Cardoso, Susana ; Freitas, Paulo P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c5724-a1ed20a5ec958efd146d7ffb7aed7e60bf0c446f3579973ccef72e14d04b877a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied sciences</topic><topic>Austria Microsystems technology</topic><topic>Boards</topic><topic>Circuit boards</topic><topic>Circuits integrats</topic><topic>CMOS</topic><topic>CMOS integrated circuits</topic><topic>Conversion</topic><topic>current measurement</topic><topic>current-to-frequency conversion schemes</topic><topic>Design</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Devices</topic><topic>Digital systems</topic><topic>Electric current</topic><topic>electric current measurement</topic><topic>electric current monitoring</topic><topic>Electric currents</topic><topic>Electrical junctions</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>electronic interfaces</topic><topic>Electronics</topic><topic>Enginyeria electrònica</topic><topic>Exact sciences and technology</topic><topic>Giant magnetoresistance</topic><topic>giant magnetoresistance technology</topic><topic>Hardware</topic><topic>Input-output equipment</topic><topic>integrated circuit measurement</topic><topic>Integrated circuits</topic><topic>Interface</topic><topic>Low-power</topic><topic>low-power electronics</topic><topic>low-power integrated circuits</topic><topic>Magnetic fields</topic><topic>magnetic tunnel junctions</topic><topic>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</topic><topic>Magnetoresistivity</topic><topic>Microelectrònica</topic><topic>Modulation</topic><topic>Parameter sensitivity</topic><topic>power consumption</topic><topic>Power integrated circuits</topic><topic>Power management</topic><topic>printed circuit board prototypes</topic><topic>printed circuits</topic><topic>Proposals</topic><topic>quasidigital front-ends</topic><topic>Resistive sensors</topic><topic>Roads & highways</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>sensitivity</topic><topic>Sensors</topic><topic>silicon area</topic><topic>size 0.35 mum</topic><topic>spin valves</topic><topic>standard complementary metal oxide semiconductor processes</topic><topic>Transistors</topic><topic>Tunnel junctions</topic><topic>Wheatstone bridges</topic><topic>Àrees temàtiques de la UPC</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>De Marcellis, Andrea</creatorcontrib><creatorcontrib>Cubells-Beltrán, María-Dolores</creatorcontrib><creatorcontrib>Reig, Candid</creatorcontrib><creatorcontrib>Madrenas, Jordi</creatorcontrib><creatorcontrib>Zadov, Boris</creatorcontrib><creatorcontrib>Paperno, Eugene</creatorcontrib><creatorcontrib>Cardoso, Susana</creatorcontrib><creatorcontrib>Freitas, Paulo P</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>DELNET Engineering & Technology Collection</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Recercat</collection><jtitle>IET circuits, devices & systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>De Marcellis, Andrea</au><au>Cubells-Beltrán, María-Dolores</au><au>Reig, Candid</au><au>Madrenas, Jordi</au><au>Zadov, Boris</au><au>Paperno, Eugene</au><au>Cardoso, Susana</au><au>Freitas, Paulo P</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology</atitle><jtitle>IET circuits, devices & systems</jtitle><date>2014-07</date><risdate>2014</risdate><volume>8</volume><issue>4</issue><spage>291</spage><epage>300</epage><pages>291-300</pages><issn>1751-858X</issn><issn>1751-8598</issn><eissn>1751-8598</eissn><abstract>In this study, the authors report on two different electronic interfaces for low-power integrated circuits electric current monitoring through current-to-frequency (I–f) conversion schemes. This proposal displays the intrinsic advantages of the quasi-digital systems regarding direct interfacing and self-calibrating capabilities. In addition, as current-sensing devices, they have made use of the giant magnetoresistance (GMR) technology because of its high sensitivity and compatibility with standard complementary metal oxide semiconductor processes. Single elements and Wheatstone bridges based on spin-valves and magnetic tunnel junctions have been considered. In this sense, schematic-level simulations for integration in Austria Microsystems 0.35 μm technology have been corroborated by means of experimental measurements with the help of printed circuit board prototypes and real GMR devices. Tables with relevant parameters (silicon area, power consumption, sensitivity etc.) have been constructed as practical tools for designers. Electric currents down to 2 μA have been resolved in this way.</abstract><cop>Stevenage</cop><pub>The Institution of Engineering and Technology</pub><doi>10.1049/iet-cds.2013.0348</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0001-8029-0068</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Applied sciences Austria Microsystems technology Boards Circuit boards Circuits integrats CMOS CMOS integrated circuits Conversion current measurement current-to-frequency conversion schemes Design Design. Technologies. Operation analysis. Testing Devices Digital systems Electric current electric current measurement electric current monitoring Electric currents Electrical junctions Electronic equipment and fabrication. Passive components, printed wiring boards, connectics electronic interfaces Electronics Enginyeria electrònica Exact sciences and technology Giant magnetoresistance giant magnetoresistance technology Hardware Input-output equipment integrated circuit measurement Integrated circuits Interface Low-power low-power electronics low-power integrated circuits Magnetic fields magnetic tunnel junctions Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Magnetoresistivity Microelectrònica Modulation Parameter sensitivity power consumption Power integrated circuits Power management printed circuit board prototypes printed circuits Proposals quasidigital front-ends Resistive sensors Roads & highways Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors sensitivity Sensors silicon area size 0.35 mum spin valves standard complementary metal oxide semiconductor processes Transistors Tunnel junctions Wheatstone bridges Àrees temàtiques de la UPC |
title | Quasi-digital front-ends for current measurement in integrated circuits with giant magnetoresistance technology |
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