Melting temperature of metal polycrystalline nanowires electrochemically deposited into the pores of anodic aluminum oxide

The arrays of metallic nanowires are considered as promising precursors for 1D semiconductor nanostructures after appropriate treatment at temperatures close to the melting point. Therefore the melting behaviour of the metallic structures in oxide templates is a key parameter for the subsequent conv...

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Veröffentlicht in:	Physical chemistry chemical physics : PCCP 2014-01, Vol.16 (36), p.19394-1941
Hauptverfasser:	Shilyaeva, Yu. I, Bardushkin, V. V, Gavrilov, S. A, Silibin, M. V, Yakovlev, V. B, Borgardt, N. I, Volkov, R. L, Smirnov, D. I, Zheludkevich, M. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Deposition Mathematical models Melting Melting points Nanowires Porosity Semiconductors
Online-Zugang:	Volltext
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