GaN-Based Very Narrow Band-Pass p-i-n Ultraviolet A Photodetectors
The modeling of aluminum gallium nitride (AlGaN) p-i-n photodetectors response in the very narrow ultraviolet A (UV-A) range is reported in this paper. To obtain narrow-band response and high short wave rejection ratio, two AlGaN buffer layer with Al-content higher than that of the absorption region...
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| Veröffentlicht in: | Applied Mechanics and Materials 2014-09, Vol.614 (International Conference Machinery, Electronics and Control Simulation), p.271-274 |
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| container_issue | International Conference Machinery, Electronics and Control Simulation |
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| container_title | Applied Mechanics and Materials |
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| creator | Wang, Guo Sheng Cao, Guo Wei Wang, Jun Guo, Jin Xie, Feng Wang, Wan Jun Cui, Nai Di Zhao, Heng Zhou, Jie |
| description | The modeling of aluminum gallium nitride (AlGaN) p-i-n photodetectors response in the very narrow ultraviolet A (UV-A) range is reported in this paper. To obtain narrow-band response and high short wave rejection ratio, two AlGaN buffer layer with Al-content higher than that of the absorption region were designed between the substrate and un-doped AlGaN absorption layer to act under backside illumination as filter for short wavelength radiation. The band-pass of these a structure depends on the buffer layer Al-content. Electronic-band-structure calculations show that the blocking layer is the crucial parameter to achieve both a high short wave rejection ratio and a low dark current. |
| doi_str_mv | 10.4028/www.scientific.net/AMM.614.271 |
| format | Article |
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To obtain narrow-band response and high short wave rejection ratio, two AlGaN buffer layer with Al-content higher than that of the absorption region were designed between the substrate and un-doped AlGaN absorption layer to act under backside illumination as filter for short wavelength radiation. The band-pass of these a structure depends on the buffer layer Al-content. Electronic-band-structure calculations show that the blocking layer is the crucial parameter to achieve both a high short wave rejection ratio and a low dark current.</description><identifier>ISSN: 1660-9336</identifier><identifier>ISSN: 1662-7482</identifier><identifier>ISBN: 9783038352105</identifier><identifier>ISBN: 3038352101</identifier><identifier>EISSN: 1662-7482</identifier><identifier>DOI: 10.4028/www.scientific.net/AMM.614.271</identifier><language>eng</language><publisher>Zurich: Trans Tech Publications Ltd</publisher><subject>Aluminum ; Aluminum gallium nitrides ; Buffer layers ; Mathematical models ; Photodetectors ; Rejection ; Short wave ; Ultraviolet</subject><ispartof>Applied Mechanics and Materials, 2014-09, Vol.614 (International Conference Machinery, Electronics and Control Simulation), p.271-274</ispartof><rights>2014 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. Sep 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c328t-44abed7c7768e37e3c8297a7e21d70032626acdcdf59bf9f3653ee9eadfc800a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/3391?width=600</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Wang, Guo Sheng</creatorcontrib><creatorcontrib>Cao, Guo Wei</creatorcontrib><creatorcontrib>Wang, Jun</creatorcontrib><creatorcontrib>Guo, Jin</creatorcontrib><creatorcontrib>Xie, Feng</creatorcontrib><creatorcontrib>Wang, Wan Jun</creatorcontrib><creatorcontrib>Cui, Nai Di</creatorcontrib><creatorcontrib>Zhao, Heng</creatorcontrib><creatorcontrib>Zhou, Jie</creatorcontrib><title>GaN-Based Very Narrow Band-Pass p-i-n Ultraviolet A Photodetectors</title><title>Applied Mechanics and Materials</title><description>The modeling of aluminum gallium nitride (AlGaN) p-i-n photodetectors response in the very narrow ultraviolet A (UV-A) range is reported in this paper. 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Electronic-band-structure calculations show that the blocking layer is the crucial parameter to achieve both a high short wave rejection ratio and a low dark current.</description><subject>Aluminum</subject><subject>Aluminum gallium nitrides</subject><subject>Buffer layers</subject><subject>Mathematical models</subject><subject>Photodetectors</subject><subject>Rejection</subject><subject>Short wave</subject><subject>Ultraviolet</subject><issn>1660-9336</issn><issn>1662-7482</issn><issn>1662-7482</issn><isbn>9783038352105</isbn><isbn>3038352101</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNqNkMtKAzEUQIMPsFb_YUAQNxnzmEkyG7EVrYJVF9ZtiJk7ODKd1CS19O-NVlBcucriHs69OQgdU5IXhKnT1WqVB9tCH9umtXkP8XQ0neaCFjmTdAsNqBAMy0KxbXRYScUJV7xklJQ7XzOCK87FHtoP4ZUQUdBCDdB4Yu7w2ASosyfw6-zOeO9W2dj0NX4wIWQL3OI-m3XRm_fWdRCzUfbw4qKrIYKNzocDtNuYLsDh9ztEs6vLx4trfHs_ubkY3WLLmYq4KMwz1NJKKRRwCdwqVkkjgdFaEsKZYMLY2tZNWT03VcNFyQEqMHVjFSGGD9HJxrvw7m0JIep5Gyx0nenBLYOmgqVvlSWtEnr0B311S9-n6zQtEyILluxDdLahrHcheGj0wrdz49eaEv2ZXKfk-ie5Tsl1Sq5Tcp2SJ8H5RpDi9CHlePm153-KDxUkjwY</recordid><startdate>20140901</startdate><enddate>20140901</enddate><creator>Wang, Guo Sheng</creator><creator>Cao, Guo Wei</creator><creator>Wang, Jun</creator><creator>Guo, Jin</creator><creator>Xie, Feng</creator><creator>Wang, Wan Jun</creator><creator>Cui, Nai Di</creator><creator>Zhao, Heng</creator><creator>Zhou, Jie</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7TB</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BFMQW</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>KR7</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QQ</scope></search><sort><creationdate>20140901</creationdate><title>GaN-Based Very Narrow Band-Pass p-i-n Ultraviolet A Photodetectors</title><author>Wang, Guo Sheng ; 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To obtain narrow-band response and high short wave rejection ratio, two AlGaN buffer layer with Al-content higher than that of the absorption region were designed between the substrate and un-doped AlGaN absorption layer to act under backside illumination as filter for short wavelength radiation. The band-pass of these a structure depends on the buffer layer Al-content. Electronic-band-structure calculations show that the blocking layer is the crucial parameter to achieve both a high short wave rejection ratio and a low dark current.</abstract><cop>Zurich</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/AMM.614.271</doi><tpages>4</tpages></addata></record> |
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| subjects | Aluminum Aluminum gallium nitrides Buffer layers Mathematical models Photodetectors Rejection Short wave Ultraviolet |
| title | GaN-Based Very Narrow Band-Pass p-i-n Ultraviolet A Photodetectors |
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