Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000-1)
We develop a bulk silver tip for tip-enhanced Raman scattering (TERS) and obtain TERS spectra of epitaxial graphene on the carbon face of 4H-SiC(000-1) with a high signal-to-noise ratio. Thanks to the high quality of TERS spectra we firstly find that the G band in the TERS spectra exhibits position-...
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| Veröffentlicht in: | Physical chemistry chemical physics : PCCP 2014-01, Vol.16 (37), p.20236-20240 |
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| container_issue | 37 |
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| container_title | Physical chemistry chemical physics : PCCP |
| container_volume | 16 |
| creator | Suzuki, Toshiaki Itoh, Tamitake Vantasin, Sanpon Minami, Satoshi Kutsuma, Yasunori Ashida, Koji Kaneko, Tada-aki Morisawa, Yusuke Miura, Takeshi Ozaki, Yukihiro |
| description | We develop a bulk silver tip for tip-enhanced Raman scattering (TERS) and obtain TERS spectra of epitaxial graphene on the carbon face of 4H-SiC(000-1) with a high signal-to-noise ratio. Thanks to the high quality of TERS spectra we firstly find that the G band in the TERS spectra exhibits position-by-position variations in both lower wavenumber shifts and spectral broadening. The analysis of the variations reveals that the shifts and broadenings have a linear correlation between each other, indicating that the variations are induced by the position dependent local stress on graphene based on a uniaxial strain model. |
| doi_str_mv | 10.1039/c4cp02078b |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1620053630</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1620053630</sourcerecordid><originalsourceid>FETCH-LOGICAL-c386t-92bc1b68ad404d253a0549267f1be76aa7d5fdc855e40a467c0625483a21024e3</originalsourceid><addsrcrecordid>eNqFkctq3EAQRZsQE7-yyQeEXo4NcqqfkpaxSGLDQII9XotSq-SR0cvdGrC_wT-dnsxktl7V5XLqUtRl7IuAKwEq_-a0m0BCmlUf2InQViU5ZPrjQaf2mJ2G8AQAwgj1iR1LIzQok5-wt1U7JTSscXBU8zvsceBhIjf7Mbhxah3vCcPGU0_DzMeGh9lTCNzFjUfi7cDnNfFudNjxeuwxGhGiqZ3xpY3eo8dpTQPxcUc69FWUDTragvomuW-LRbwsERfn7KjBLtDn_TxjDz9_rIqbZPn7123xfZk4ldk5yWXlRGUzrDXoWhqFYHQubdqIilKLmNamqV1mDGlAbVMHVhqdKZQCpCZ1xha73MmPzxsKc9m3wVHX4UDjJpTCSgCjrIL3UWMyI7U2JqKXO9TF1wVPTTn5tkf_Wgootz2VhS7-_OvpOsJf97mbqqf6gP4vRv0F95SMCw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1558524455</pqid></control><display><type>article</type><title>Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000-1)</title><source>MEDLINE</source><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Suzuki, Toshiaki ; Itoh, Tamitake ; Vantasin, Sanpon ; Minami, Satoshi ; Kutsuma, Yasunori ; Ashida, Koji ; Kaneko, Tada-aki ; Morisawa, Yusuke ; Miura, Takeshi ; Ozaki, Yukihiro</creator><creatorcontrib>Suzuki, Toshiaki ; Itoh, Tamitake ; Vantasin, Sanpon ; Minami, Satoshi ; Kutsuma, Yasunori ; Ashida, Koji ; Kaneko, Tada-aki ; Morisawa, Yusuke ; Miura, Takeshi ; Ozaki, Yukihiro</creatorcontrib><description>We develop a bulk silver tip for tip-enhanced Raman scattering (TERS) and obtain TERS spectra of epitaxial graphene on the carbon face of 4H-SiC(000-1) with a high signal-to-noise ratio. Thanks to the high quality of TERS spectra we firstly find that the G band in the TERS spectra exhibits position-by-position variations in both lower wavenumber shifts and spectral broadening. The analysis of the variations reveals that the shifts and broadenings have a linear correlation between each other, indicating that the variations are induced by the position dependent local stress on graphene based on a uniaxial strain model.</description><identifier>ISSN: 1463-9076</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/c4cp02078b</identifier><identifier>PMID: 25140359</identifier><language>eng</language><publisher>England</publisher><subject>Band spectra ; Carbon ; Carbon Compounds, Inorganic - chemistry ; Epitaxy ; Graphene ; Graphite - chemistry ; Microscopy, Atomic Force ; Raman scattering ; Signal-To-Noise Ratio ; Silicon Compounds - chemistry ; Silver - chemistry ; Spectra ; Spectrum Analysis, Raman ; Strain ; Stresses</subject><ispartof>Physical chemistry chemical physics : PCCP, 2014-01, Vol.16 (37), p.20236-20240</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c386t-92bc1b68ad404d253a0549267f1be76aa7d5fdc855e40a467c0625483a21024e3</citedby><cites>FETCH-LOGICAL-c386t-92bc1b68ad404d253a0549267f1be76aa7d5fdc855e40a467c0625483a21024e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25140359$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Suzuki, Toshiaki</creatorcontrib><creatorcontrib>Itoh, Tamitake</creatorcontrib><creatorcontrib>Vantasin, Sanpon</creatorcontrib><creatorcontrib>Minami, Satoshi</creatorcontrib><creatorcontrib>Kutsuma, Yasunori</creatorcontrib><creatorcontrib>Ashida, Koji</creatorcontrib><creatorcontrib>Kaneko, Tada-aki</creatorcontrib><creatorcontrib>Morisawa, Yusuke</creatorcontrib><creatorcontrib>Miura, Takeshi</creatorcontrib><creatorcontrib>Ozaki, Yukihiro</creatorcontrib><title>Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000-1)</title><title>Physical chemistry chemical physics : PCCP</title><addtitle>Phys Chem Chem Phys</addtitle><description>We develop a bulk silver tip for tip-enhanced Raman scattering (TERS) and obtain TERS spectra of epitaxial graphene on the carbon face of 4H-SiC(000-1) with a high signal-to-noise ratio. Thanks to the high quality of TERS spectra we firstly find that the G band in the TERS spectra exhibits position-by-position variations in both lower wavenumber shifts and spectral broadening. The analysis of the variations reveals that the shifts and broadenings have a linear correlation between each other, indicating that the variations are induced by the position dependent local stress on graphene based on a uniaxial strain model.</description><subject>Band spectra</subject><subject>Carbon</subject><subject>Carbon Compounds, Inorganic - chemistry</subject><subject>Epitaxy</subject><subject>Graphene</subject><subject>Graphite - chemistry</subject><subject>Microscopy, Atomic Force</subject><subject>Raman scattering</subject><subject>Signal-To-Noise Ratio</subject><subject>Silicon Compounds - chemistry</subject><subject>Silver - chemistry</subject><subject>Spectra</subject><subject>Spectrum Analysis, Raman</subject><subject>Strain</subject><subject>Stresses</subject><issn>1463-9076</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNqFkctq3EAQRZsQE7-yyQeEXo4NcqqfkpaxSGLDQII9XotSq-SR0cvdGrC_wT-dnsxktl7V5XLqUtRl7IuAKwEq_-a0m0BCmlUf2InQViU5ZPrjQaf2mJ2G8AQAwgj1iR1LIzQok5-wt1U7JTSscXBU8zvsceBhIjf7Mbhxah3vCcPGU0_DzMeGh9lTCNzFjUfi7cDnNfFudNjxeuwxGhGiqZ3xpY3eo8dpTQPxcUc69FWUDTragvomuW-LRbwsERfn7KjBLtDn_TxjDz9_rIqbZPn7123xfZk4ldk5yWXlRGUzrDXoWhqFYHQubdqIilKLmNamqV1mDGlAbVMHVhqdKZQCpCZ1xha73MmPzxsKc9m3wVHX4UDjJpTCSgCjrIL3UWMyI7U2JqKXO9TF1wVPTTn5tkf_Wgootz2VhS7-_OvpOsJf97mbqqf6gP4vRv0F95SMCw</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Suzuki, Toshiaki</creator><creator>Itoh, Tamitake</creator><creator>Vantasin, Sanpon</creator><creator>Minami, Satoshi</creator><creator>Kutsuma, Yasunori</creator><creator>Ashida, Koji</creator><creator>Kaneko, Tada-aki</creator><creator>Morisawa, Yusuke</creator><creator>Miura, Takeshi</creator><creator>Ozaki, Yukihiro</creator><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20140101</creationdate><title>Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000-1)</title><author>Suzuki, Toshiaki ; Itoh, Tamitake ; Vantasin, Sanpon ; Minami, Satoshi ; Kutsuma, Yasunori ; Ashida, Koji ; Kaneko, Tada-aki ; Morisawa, Yusuke ; Miura, Takeshi ; Ozaki, Yukihiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c386t-92bc1b68ad404d253a0549267f1be76aa7d5fdc855e40a467c0625483a21024e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Band spectra</topic><topic>Carbon</topic><topic>Carbon Compounds, Inorganic - chemistry</topic><topic>Epitaxy</topic><topic>Graphene</topic><topic>Graphite - chemistry</topic><topic>Microscopy, Atomic Force</topic><topic>Raman scattering</topic><topic>Signal-To-Noise Ratio</topic><topic>Silicon Compounds - chemistry</topic><topic>Silver - chemistry</topic><topic>Spectra</topic><topic>Spectrum Analysis, Raman</topic><topic>Strain</topic><topic>Stresses</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Suzuki, Toshiaki</creatorcontrib><creatorcontrib>Itoh, Tamitake</creatorcontrib><creatorcontrib>Vantasin, Sanpon</creatorcontrib><creatorcontrib>Minami, Satoshi</creatorcontrib><creatorcontrib>Kutsuma, Yasunori</creatorcontrib><creatorcontrib>Ashida, Koji</creatorcontrib><creatorcontrib>Kaneko, Tada-aki</creatorcontrib><creatorcontrib>Morisawa, Yusuke</creatorcontrib><creatorcontrib>Miura, Takeshi</creatorcontrib><creatorcontrib>Ozaki, Yukihiro</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physical chemistry chemical physics : PCCP</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Suzuki, Toshiaki</au><au>Itoh, Tamitake</au><au>Vantasin, Sanpon</au><au>Minami, Satoshi</au><au>Kutsuma, Yasunori</au><au>Ashida, Koji</au><au>Kaneko, Tada-aki</au><au>Morisawa, Yusuke</au><au>Miura, Takeshi</au><au>Ozaki, Yukihiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000-1)</atitle><jtitle>Physical chemistry chemical physics : PCCP</jtitle><addtitle>Phys Chem Chem Phys</addtitle><date>2014-01-01</date><risdate>2014</risdate><volume>16</volume><issue>37</issue><spage>20236</spage><epage>20240</epage><pages>20236-20240</pages><issn>1463-9076</issn><eissn>1463-9084</eissn><abstract>We develop a bulk silver tip for tip-enhanced Raman scattering (TERS) and obtain TERS spectra of epitaxial graphene on the carbon face of 4H-SiC(000-1) with a high signal-to-noise ratio. Thanks to the high quality of TERS spectra we firstly find that the G band in the TERS spectra exhibits position-by-position variations in both lower wavenumber shifts and spectral broadening. The analysis of the variations reveals that the shifts and broadenings have a linear correlation between each other, indicating that the variations are induced by the position dependent local stress on graphene based on a uniaxial strain model.</abstract><cop>England</cop><pmid>25140359</pmid><doi>10.1039/c4cp02078b</doi><tpages>5</tpages></addata></record> |
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| ispartof | Physical chemistry chemical physics : PCCP, 2014-01, Vol.16 (37), p.20236-20240 |
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| source | MEDLINE; Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Band spectra Carbon Carbon Compounds, Inorganic - chemistry Epitaxy Graphene Graphite - chemistry Microscopy, Atomic Force Raman scattering Signal-To-Noise Ratio Silicon Compounds - chemistry Silver - chemistry Spectra Spectrum Analysis, Raman Strain Stresses |
| title | Tip-enhanced Raman spectroscopic measurement of stress change in the local domain of epitaxial graphene on the carbon face of 4H-SiC(000-1) |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T06%3A47%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tip-enhanced%20Raman%20spectroscopic%20measurement%20of%20stress%20change%20in%20the%20local%20domain%20of%20epitaxial%20graphene%20on%20the%20carbon%20face%20of%204H-SiC(000-1)&rft.jtitle=Physical%20chemistry%20chemical%20physics%20:%20PCCP&rft.au=Suzuki,%20Toshiaki&rft.date=2014-01-01&rft.volume=16&rft.issue=37&rft.spage=20236&rft.epage=20240&rft.pages=20236-20240&rft.issn=1463-9076&rft.eissn=1463-9084&rft_id=info:doi/10.1039/c4cp02078b&rft_dat=%3Cproquest_cross%3E1620053630%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1558524455&rft_id=info:pmid/25140359&rfr_iscdi=true |