Electric control of spin in monolayer WSe2 field effect transistors
We report first-principles theoretical investigations of quantum transport in a monolayer WSe2 field effect transistor (FET). Due to strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional lattice, monolayer WSe2 has an electronic structure that exhibits Zeeman-like up-do...
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| Veröffentlicht in: | Nanotechnology 2014-10, Vol.25 (43), p.435201-435201 |
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| container_end_page | 435201 |
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| container_issue | 43 |
| container_start_page | 435201 |
| container_title | Nanotechnology |
| container_volume | 25 |
| creator | Gong, Kui Zhang, Lei Liu, Dongping Liu, Lei Zhu, Yu Zhao, Yonghong Guo, Hong |
| description | We report first-principles theoretical investigations of quantum transport in a monolayer WSe2 field effect transistor (FET). Due to strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional lattice, monolayer WSe2 has an electronic structure that exhibits Zeeman-like up-down spin texture near the K and points of the Brillouin zone. In a FET, the gate electric field induces an extra, externally tunable SOI that re-orients the spins into a Rashba-like texture thereby realizing electric control of the spin. The conductance of FET is modulated by the spin texture, namely by if the spin orientation of the carrier after the gated channel region, matches or miss-matches that of the FET drain electrode. The carrier current in the FET is labelled by both the valley index and spin index, realizing valleytronics and spintronics in the same device. |
| doi_str_mv | 10.1088/0957-4484/25/43/435201 |
| format | Article |
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Due to strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional lattice, monolayer WSe2 has an electronic structure that exhibits Zeeman-like up-down spin texture near the K and points of the Brillouin zone. In a FET, the gate electric field induces an extra, externally tunable SOI that re-orients the spins into a Rashba-like texture thereby realizing electric control of the spin. The conductance of FET is modulated by the spin texture, namely by if the spin orientation of the carrier after the gated channel region, matches or miss-matches that of the FET drain electrode. The carrier current in the FET is labelled by both the valley index and spin index, realizing valleytronics and spintronics in the same device.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/0957-4484/25/43/435201</identifier><identifier>PMID: 25287881</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Applied sciences ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals ; Electronics ; Exact sciences and technology ; first-principles calculation ; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics ; monolayer WSe2 ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; spin-orbit interaction ; spintronics ; Transistors ; valleytronics</subject><ispartof>Nanotechnology, 2014-10, Vol.25 (43), p.435201-435201</ispartof><rights>2014 IOP Publishing Ltd</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1088/0957-4484/25/43/435201/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28887386$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25287881$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Gong, Kui</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Liu, Dongping</creatorcontrib><creatorcontrib>Liu, Lei</creatorcontrib><creatorcontrib>Zhu, Yu</creatorcontrib><creatorcontrib>Zhao, Yonghong</creatorcontrib><creatorcontrib>Guo, Hong</creatorcontrib><title>Electric control of spin in monolayer WSe2 field effect transistors</title><title>Nanotechnology</title><addtitle>NANO</addtitle><addtitle>Nanotechnology</addtitle><description>We report first-principles theoretical investigations of quantum transport in a monolayer WSe2 field effect transistor (FET). Due to strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional lattice, monolayer WSe2 has an electronic structure that exhibits Zeeman-like up-down spin texture near the K and points of the Brillouin zone. In a FET, the gate electric field induces an extra, externally tunable SOI that re-orients the spins into a Rashba-like texture thereby realizing electric control of the spin. The conductance of FET is modulated by the spin texture, namely by if the spin orientation of the carrier after the gated channel region, matches or miss-matches that of the FET drain electrode. The carrier current in the FET is labelled by both the valley index and spin index, realizing valleytronics and spintronics in the same device.</description><subject>Applied sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>first-principles calculation</subject><subject>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</subject><subject>monolayer WSe2</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>spin-orbit interaction</subject><subject>spintronics</subject><subject>Transistors</subject><subject>valleytronics</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkU1LAzEQhoMotlb_QslF8LI2X5tkj1L8goIHFY8hzSaQkt3UZPfQf2-WVoWBOcwzL_O-A8ASo3uMpFyhphYVY5KtSL1itFRNED4Dc0w5rnhN5DmY_0EzcJXzDiGMJcGXYEbKXEiJ52D9GKwZkjfQxH5IMcDoYN77HpbqYh-DPtgEv94tgc7b0ELrXNmAQ9J99nmIKV-DC6dDtjenvgCfT48f65dq8_b8un7YVJ5gNlSEM2O1bRCiphEGI95gzOpaEsq2DMlyk3ECtWzbaq41aZ0mRNJWO00N1w1dgLuj7j7F79HmQXU-GxuC7m0cs8IcI8GJELygyxM6bjvbqn3ynU4H9Wu8ALcnQGejgytujM__nJRSUDkJkSPn417t4pj64lBhpKYvqClgNQVchBWj6vgF-gPbaHYa</recordid><startdate>20141031</startdate><enddate>20141031</enddate><creator>Gong, Kui</creator><creator>Zhang, Lei</creator><creator>Liu, Dongping</creator><creator>Liu, Lei</creator><creator>Zhu, Yu</creator><creator>Zhao, Yonghong</creator><creator>Guo, Hong</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20141031</creationdate><title>Electric control of spin in monolayer WSe2 field effect transistors</title><author>Gong, Kui ; Zhang, Lei ; Liu, Dongping ; Liu, Lei ; Zhu, Yu ; Zhao, Yonghong ; Guo, Hong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i214t-264ceae9003c97c1069114558234b408528cf70d4bda6aa2dfa2283dafa3c6a93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Applied sciences</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>first-principles calculation</topic><topic>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</topic><topic>monolayer WSe2</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>spin-orbit interaction</topic><topic>spintronics</topic><topic>Transistors</topic><topic>valleytronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gong, Kui</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Liu, Dongping</creatorcontrib><creatorcontrib>Liu, Lei</creatorcontrib><creatorcontrib>Zhu, Yu</creatorcontrib><creatorcontrib>Zhao, Yonghong</creatorcontrib><creatorcontrib>Guo, Hong</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gong, Kui</au><au>Zhang, Lei</au><au>Liu, Dongping</au><au>Liu, Lei</au><au>Zhu, Yu</au><au>Zhao, Yonghong</au><au>Guo, Hong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electric control of spin in monolayer WSe2 field effect transistors</atitle><jtitle>Nanotechnology</jtitle><stitle>NANO</stitle><addtitle>Nanotechnology</addtitle><date>2014-10-31</date><risdate>2014</risdate><volume>25</volume><issue>43</issue><spage>435201</spage><epage>435201</epage><pages>435201-435201</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>We report first-principles theoretical investigations of quantum transport in a monolayer WSe2 field effect transistor (FET). Due to strong spin-orbit interaction (SOI) and the atomic structure of the two-dimensional lattice, monolayer WSe2 has an electronic structure that exhibits Zeeman-like up-down spin texture near the K and points of the Brillouin zone. In a FET, the gate electric field induces an extra, externally tunable SOI that re-orients the spins into a Rashba-like texture thereby realizing electric control of the spin. The conductance of FET is modulated by the spin texture, namely by if the spin orientation of the carrier after the gated channel region, matches or miss-matches that of the FET drain electrode. The carrier current in the FET is labelled by both the valley index and spin index, realizing valleytronics and spintronics in the same device.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><pmid>25287881</pmid><doi>10.1088/0957-4484/25/43/435201</doi><tpages>8</tpages></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals Electronics Exact sciences and technology first-principles calculation Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics monolayer WSe2 Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices spin-orbit interaction spintronics Transistors valleytronics |
| title | Electric control of spin in monolayer WSe2 field effect transistors |
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