Oxygen vacancy-related dielectric relaxation and electrical conductivity in La-doped Ba(Zr sub(0.9)Ti sub(0.1))O sub(3) ceramics

Ba sub(1-x)La sub(x) (Zr sub(0.9)Ti sub(0.1)) sub(1-x/4)O sub(3) (BLZT) ceramics with x = 0.02 (BLZT-1), 0.04 (BLZT-2), 0.06 (BLZT-3) and 0.08 (BLZT-4) were prepared by a solid-state reaction route. Crystal structure of the BLZT ceramics was determined using X-ray diffraction and Raman spectroscopy....

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2014-09, Vol.25 (9), p.4058-4065
Hauptverfasser:	Zheng, Shaoying, Shi, Danping, Liu, Laijun, Li, Guizhong, Wang, Quanchao, Fang, Liang, Elouadi, Brahim
Format:	Artikel
Sprache:	eng
Schlagworte:	Anomalies Ceramics Dielectric properties Dielectric relaxation Electrical conductivity Electrical resistivity Resistivity Vacancies
Online-Zugang:	Volltext
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