Gate Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors

Solution‐processed oxide semiconductors (OSs) used as channel layer have been presented as a solution to the demand for flexible, cheap, and transparent thin‐film transistors (TFTs). In order to produce high‐performance and long‐sustainable portable devices with the solution‐processed OS TFTs, the l...

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Veröffentlicht in:	Advanced functional materials 2014-08, Vol.24 (29), p.4689-4697
Hauptverfasser:	Lee, Eungkyu, Ko, Jieun, Lim, Keon-Hee, Kim, Kyongjun, Park, Si Yun, Myoung, Jae M., Kim, Youn Sang
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance disordered oxide semiconductors field-effect mobility gate insulators Gates Operating systems Oxides Semiconductor devices Semiconductors solution-processed oxide semiconductors Thin film transistors Transistors
Online-Zugang:	Volltext
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