Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films
Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint) on defect formation is explored by a means of flexoelectricity. Our study provides novel...
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| Veröffentlicht in: | Advanced materials (Weinheim) 2014-08, Vol.26 (29), p.5005-5011 |
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| container_end_page | 5011 |
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| container_issue | 29 |
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| container_title | Advanced materials (Weinheim) |
| container_volume | 26 |
| creator | Lee, Daesu Jeon, Byung Chul Yoon, Aram Shin, Yeong Jae Lee, Myang Hwan Song, Tae Kwon Bu, Sang Don Kim, Miyoung Chung, Jin-Seok Yoon, Jong-Gul Noh, Tae Won |
| description | Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint) on defect formation is explored by a means of flexoelectricity. Our study provides novel insight into defect engineering, as well as allows a pathway to design defect configuration and associated electronic function. |
| doi_str_mv | 10.1002/adma.201400654 |
| format | Article |
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An intriguing, so far never demonstrated, effect of internal electric field (Eint) on defect formation is explored by a means of flexoelectricity. 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KGaA, Weinheim.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4824-db41e86c002c4e67ea0780bfb46b42788772276153bba11dc9418ccb85bfe7043</citedby><cites>FETCH-LOGICAL-c4824-db41e86c002c4e67ea0780bfb46b42788772276153bba11dc9418ccb85bfe7043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadma.201400654$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadma.201400654$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/24847984$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Daesu</creatorcontrib><creatorcontrib>Jeon, Byung Chul</creatorcontrib><creatorcontrib>Yoon, Aram</creatorcontrib><creatorcontrib>Shin, Yeong Jae</creatorcontrib><creatorcontrib>Lee, Myang Hwan</creatorcontrib><creatorcontrib>Song, Tae Kwon</creatorcontrib><creatorcontrib>Bu, Sang Don</creatorcontrib><creatorcontrib>Kim, Miyoung</creatorcontrib><creatorcontrib>Chung, Jin-Seok</creatorcontrib><creatorcontrib>Yoon, Jong-Gul</creatorcontrib><creatorcontrib>Noh, Tae Won</creatorcontrib><title>Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films</title><title>Advanced materials (Weinheim)</title><addtitle>Adv. Mater</addtitle><description>Flexoelectric control of defect formation and associated electronic function is demonstrated in ferroelectric BiFeO3 thin films. An intriguing, so far never demonstrated, effect of internal electric field (Eint) on defect formation is explored by a means of flexoelectricity. 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| source | MEDLINE; Wiley Online Library Journals Frontfile Complete |
| subjects | defect engineering Defects Design defects Electricity Electronics epitaxial thin film Epitaxy Ferric Compounds - chemistry ferroelectric Ferroelectric materials Ferroelectricity flexoelectric Formations Mechanical Phenomena strain gradient Temperature Thin films |
| title | Flexoelectric Control of Defect Formation in Ferroelectric Epitaxial Thin Films |
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