Sequential Bi-C bond activation reactions of BiEt₃ via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr₂C₆H₃)]₂; E = Al, Ga, In}

Sequential Bi-C bond activation reactions of BiEt₃ via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr₂C₆H₃)]₂; E = Al, Ga, In}

Two of the Bi-C bonds of BiEt3 are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; M = Al, Ga, In}. The first Bi-C bond activation leads to the formation of insertion complexes, [RMEt(BiEt2)] (M = Al 1; Ga 2; In 3), whereas the consecutive second activation proceeds through...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Chemical communications (Cambridge, England) England), 2014-10, Vol.50 (82), p.12382-12384
Hauptverfasser: Ganesamoorthy, C, Bläser, D, Wölper, C, Schulz, S
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Two of the Bi-C bonds of BiEt3 are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; M = Al, Ga, In}. The first Bi-C bond activation leads to the formation of insertion complexes, [RMEt(BiEt2)] (M = Al 1; Ga 2; In 3), whereas the consecutive second activation proceeds through a reductive elimination of RMEt2 (M = Al 4, Ga 5), elemental Bi and BiEt3.
ISSN:1364-548X
DOI:10.1039/c4cc05028b