A Compact Model of Program Window in HfO sub(x) RRAM Devices for Conductive Filament Characteristics Analysis
This paper presents a physics-based compact model for the program window in HfO sub(x) resistive random access memory devices, defined as the ratio of the resistances in high resistance state (HRS) and low resistance state (LRS). This model allows extracting the characteristics of the conductive fil...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2014-08, Vol.61 (8), p.2668-2673 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2673 |
|---|---|
| container_issue | 8 |
| container_start_page | 2668 |
| container_title | IEEE transactions on electron devices |
| container_volume | 61 |
| creator | Larcher, Luca Puglisi, Francesco Maria Pavan, Paolo Padovani, Andrea Vandelli, Luca Bersuker, Gennadi |
| description | This paper presents a physics-based compact model for the program window in HfO sub(x) resistive random access memory devices, defined as the ratio of the resistances in high resistance state (HRS) and low resistance state (LRS). This model allows extracting the characteristics of the conductive filament (CF) in HRS. For a given forming current compliance limit, the program window is shown to be correlated to the thickness of the reoxidized portion of the CF in HRS, which can be modulated by the reset voltage amplitude. On the other hand, the statistical distribution of the memory window depends exponentially on the barrier thickness variations that points to the critical role of reset conditions for the performance optimization of RRAM devices. |
| doi_str_mv | 10.1109/TED.2014.2329020 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1559721654</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1559721654</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_15597216543</originalsourceid><addsrcrecordid>eNqVj71OwzAYRS0EEuFnZ_zGMiTYjpPWY5S26lKBqkqMlUkcMPJP8ecUePtm4AWYrq507pEuIQ-MFoxR-bRfLQtOmSh4ySXl9IJkrKrmuaxFfUkyStkil-WivCY3iJ9TrYXgGXENtMEdVZdgG3ptIQzwEsN7VA5eje_DNxgPm-EZcHyb_TzCbtdsYalPptMIQ4jT3Pdjl8xJw9pY5bRP0H6oOCl1NJhMh9B4ZX_R4B25GpRFff-Xt2S2Xu3bTX6M4WvUmA7OYKetVV6HEQ_TAznnrK5E-Q_0DChHUnY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1559721654</pqid></control><display><type>article</type><title>A Compact Model of Program Window in HfO sub(x) RRAM Devices for Conductive Filament Characteristics Analysis</title><source>IEEE Xplore</source><creator>Larcher, Luca ; Puglisi, Francesco Maria ; Pavan, Paolo ; Padovani, Andrea ; Vandelli, Luca ; Bersuker, Gennadi</creator><creatorcontrib>Larcher, Luca ; Puglisi, Francesco Maria ; Pavan, Paolo ; Padovani, Andrea ; Vandelli, Luca ; Bersuker, Gennadi</creatorcontrib><description>This paper presents a physics-based compact model for the program window in HfO sub(x) resistive random access memory devices, defined as the ratio of the resistances in high resistance state (HRS) and low resistance state (LRS). This model allows extracting the characteristics of the conductive filament (CF) in HRS. For a given forming current compliance limit, the program window is shown to be correlated to the thickness of the reoxidized portion of the CF in HRS, which can be modulated by the reset voltage amplitude. On the other hand, the statistical distribution of the memory window depends exponentially on the barrier thickness variations that points to the critical role of reset conditions for the performance optimization of RRAM devices.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2014.2329020</identifier><language>eng</language><subject>Electric potential ; Filaments ; Memory devices ; Optimization ; Random access memory ; Statistical distributions ; Voltage</subject><ispartof>IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2668-2673</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Larcher, Luca</creatorcontrib><creatorcontrib>Puglisi, Francesco Maria</creatorcontrib><creatorcontrib>Pavan, Paolo</creatorcontrib><creatorcontrib>Padovani, Andrea</creatorcontrib><creatorcontrib>Vandelli, Luca</creatorcontrib><creatorcontrib>Bersuker, Gennadi</creatorcontrib><title>A Compact Model of Program Window in HfO sub(x) RRAM Devices for Conductive Filament Characteristics Analysis</title><title>IEEE transactions on electron devices</title><description>This paper presents a physics-based compact model for the program window in HfO sub(x) resistive random access memory devices, defined as the ratio of the resistances in high resistance state (HRS) and low resistance state (LRS). This model allows extracting the characteristics of the conductive filament (CF) in HRS. For a given forming current compliance limit, the program window is shown to be correlated to the thickness of the reoxidized portion of the CF in HRS, which can be modulated by the reset voltage amplitude. On the other hand, the statistical distribution of the memory window depends exponentially on the barrier thickness variations that points to the critical role of reset conditions for the performance optimization of RRAM devices.</description><subject>Electric potential</subject><subject>Filaments</subject><subject>Memory devices</subject><subject>Optimization</subject><subject>Random access memory</subject><subject>Statistical distributions</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqVj71OwzAYRS0EEuFnZ_zGMiTYjpPWY5S26lKBqkqMlUkcMPJP8ecUePtm4AWYrq507pEuIQ-MFoxR-bRfLQtOmSh4ySXl9IJkrKrmuaxFfUkyStkil-WivCY3iJ9TrYXgGXENtMEdVZdgG3ptIQzwEsN7VA5eje_DNxgPm-EZcHyb_TzCbtdsYalPptMIQ4jT3Pdjl8xJw9pY5bRP0H6oOCl1NJhMh9B4ZX_R4B25GpRFff-Xt2S2Xu3bTX6M4WvUmA7OYKetVV6HEQ_TAznnrK5E-Q_0DChHUnY</recordid><startdate>20140801</startdate><enddate>20140801</enddate><creator>Larcher, Luca</creator><creator>Puglisi, Francesco Maria</creator><creator>Pavan, Paolo</creator><creator>Padovani, Andrea</creator><creator>Vandelli, Luca</creator><creator>Bersuker, Gennadi</creator><scope>7SC</scope><scope>7SP</scope><scope>7TB</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>20140801</creationdate><title>A Compact Model of Program Window in HfO sub(x) RRAM Devices for Conductive Filament Characteristics Analysis</title><author>Larcher, Luca ; Puglisi, Francesco Maria ; Pavan, Paolo ; Padovani, Andrea ; Vandelli, Luca ; Bersuker, Gennadi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_15597216543</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Electric potential</topic><topic>Filaments</topic><topic>Memory devices</topic><topic>Optimization</topic><topic>Random access memory</topic><topic>Statistical distributions</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Larcher, Luca</creatorcontrib><creatorcontrib>Puglisi, Francesco Maria</creatorcontrib><creatorcontrib>Pavan, Paolo</creatorcontrib><creatorcontrib>Padovani, Andrea</creatorcontrib><creatorcontrib>Vandelli, Luca</creatorcontrib><creatorcontrib>Bersuker, Gennadi</creatorcontrib><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Larcher, Luca</au><au>Puglisi, Francesco Maria</au><au>Pavan, Paolo</au><au>Padovani, Andrea</au><au>Vandelli, Luca</au><au>Bersuker, Gennadi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Compact Model of Program Window in HfO sub(x) RRAM Devices for Conductive Filament Characteristics Analysis</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>2014-08-01</date><risdate>2014</risdate><volume>61</volume><issue>8</issue><spage>2668</spage><epage>2673</epage><pages>2668-2673</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><abstract>This paper presents a physics-based compact model for the program window in HfO sub(x) resistive random access memory devices, defined as the ratio of the resistances in high resistance state (HRS) and low resistance state (LRS). This model allows extracting the characteristics of the conductive filament (CF) in HRS. For a given forming current compliance limit, the program window is shown to be correlated to the thickness of the reoxidized portion of the CF in HRS, which can be modulated by the reset voltage amplitude. On the other hand, the statistical distribution of the memory window depends exponentially on the barrier thickness variations that points to the critical role of reset conditions for the performance optimization of RRAM devices.</abstract><doi>10.1109/TED.2014.2329020</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2668-2673 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1559721654 |
| source | IEEE Xplore |
| subjects | Electric potential Filaments Memory devices Optimization Random access memory Statistical distributions Voltage |
| title | A Compact Model of Program Window in HfO sub(x) RRAM Devices for Conductive Filament Characteristics Analysis |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T09%3A02%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Compact%20Model%20of%20Program%20Window%20in%20HfO%20sub(x)%20RRAM%20Devices%20for%20Conductive%20Filament%20Characteristics%20Analysis&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Larcher,%20Luca&rft.date=2014-08-01&rft.volume=61&rft.issue=8&rft.spage=2668&rft.epage=2673&rft.pages=2668-2673&rft.issn=0018-9383&rft.eissn=1557-9646&rft_id=info:doi/10.1109/TED.2014.2329020&rft_dat=%3Cproquest%3E1559721654%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1559721654&rft_id=info:pmid/&rfr_iscdi=true |