Electron-electron interactions and the metal-insulator transition in heavily doped silicon
The metal‐insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On‐site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubba...
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| Veröffentlicht in: | Annalen der Physik 2011-08, Vol.523 (8-9), p.599-611 |
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| description | The metal‐insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On‐site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side. Continuous stress tuning allows the observation of finite‐temperature dynamic scaling of σ (T,S) and hence a reliable determination of the critical exponent μ of the extrapolated zero‐temperature conductivity σ (0) ∼ | S ‐ Sc |μ, i.e., μ = 1, and of the dynamical exponent z = 3. The issue of half‐filling vs. away from half‐filling of the donor band (i.e., uncompensated vs. compensated semiconductors) is discussed in detail.
The metal‐insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On‐site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side. |
| doi_str_mv | 10.1002/andp.201100034 |
| format | Article |
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The metal‐insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On‐site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side.</description><identifier>ISSN: 0003-3804</identifier><identifier>EISSN: 1521-3889</identifier><identifier>DOI: 10.1002/andp.201100034</identifier><identifier>CODEN: ANPYA2</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Coulomb friction ; critical behavior ; dynamic scaling ; electrical conductivity ; electron-electron interaction ; heavily doped silicon ; Hubbard splitting ; Insulators ; Kondo effect ; Lead (metal) ; Metal-insulator transition ; Semiconductors ; specific heat ; Splitting ; Stress concentration ; Stresses ; thermoelectric power</subject><ispartof>Annalen der Physik, 2011-08, Vol.523 (8-9), p.599-611</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4544-2025b508452adb9d33f1ee380c3b216c9274678b19b3998e45a5071361d18393</citedby><cites>FETCH-LOGICAL-c4544-2025b508452adb9d33f1ee380c3b216c9274678b19b3998e45a5071361d18393</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fandp.201100034$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fandp.201100034$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>315,781,785,1418,27929,27930,45579,45580</link.rule.ids></links><search><creatorcontrib>v Lohneysen, H</creatorcontrib><title>Electron-electron interactions and the metal-insulator transition in heavily doped silicon</title><title>Annalen der Physik</title><addtitle>Ann. Phys</addtitle><description>The metal‐insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On‐site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side. Continuous stress tuning allows the observation of finite‐temperature dynamic scaling of σ (T,S) and hence a reliable determination of the critical exponent μ of the extrapolated zero‐temperature conductivity σ (0) ∼ | S ‐ Sc |μ, i.e., μ = 1, and of the dynamical exponent z = 3. The issue of half‐filling vs. away from half‐filling of the donor band (i.e., uncompensated vs. compensated semiconductors) is discussed in detail.
The metal‐insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On‐site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side.</description><subject>Coulomb friction</subject><subject>critical behavior</subject><subject>dynamic scaling</subject><subject>electrical conductivity</subject><subject>electron-electron interaction</subject><subject>heavily doped silicon</subject><subject>Hubbard splitting</subject><subject>Insulators</subject><subject>Kondo effect</subject><subject>Lead (metal)</subject><subject>Metal-insulator transition</subject><subject>Semiconductors</subject><subject>specific heat</subject><subject>Splitting</subject><subject>Stress concentration</subject><subject>Stresses</subject><subject>thermoelectric power</subject><issn>0003-3804</issn><issn>1521-3889</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLAzEURoMoWKpb1wNu3ExNJsnMZClaH1DqA1FwEzIztzQ1TWqSqv33ZqiIuHGVe8M5l48PoSOCRwTj4lTZbjUqMEkLpmwHDQgvSE7rWuyiQf-XZsz20WEIi7RijgtcsAF6GRtoo3c2h-8h0zaCV23UzoYs3c3iHLIlRGVybcPaqOh8Fr2yQfdM4rM5qHdtNlnnVtBlQRvdOnuA9mbKBDj8fofo8XL8eH6dT26vbs7PJnnLOGN5ysEbjmvGC9U1oqN0RgBS2pY2BSlbUVSsrOqGiIYKUQPjiuOK0JJ0pKaCDtHJ9uzKu7c1hCiXOrRgjLLg1kESzkWFRUWqhB7_QRdu7W0K11OMElrzOlGjLdV6F4KHmVx5vVR-IwmWfdmyL1v-lJ0EsRU-tIHNP7Q8m17c_XbzratDhM8fV_lXWVa04vJ5eiXvJ08lfZk-SE6_AHeWkSM</recordid><startdate>201108</startdate><enddate>201108</enddate><creator>v Lohneysen, H</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SP</scope></search><sort><creationdate>201108</creationdate><title>Electron-electron interactions and the metal-insulator transition in heavily doped silicon</title><author>v Lohneysen, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4544-2025b508452adb9d33f1ee380c3b216c9274678b19b3998e45a5071361d18393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Coulomb friction</topic><topic>critical behavior</topic><topic>dynamic scaling</topic><topic>electrical conductivity</topic><topic>electron-electron interaction</topic><topic>heavily doped silicon</topic><topic>Hubbard splitting</topic><topic>Insulators</topic><topic>Kondo effect</topic><topic>Lead (metal)</topic><topic>Metal-insulator transition</topic><topic>Semiconductors</topic><topic>specific heat</topic><topic>Splitting</topic><topic>Stress concentration</topic><topic>Stresses</topic><topic>thermoelectric power</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>v Lohneysen, H</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Electronics & Communications Abstracts</collection><jtitle>Annalen der Physik</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>v Lohneysen, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electron-electron interactions and the metal-insulator transition in heavily doped silicon</atitle><jtitle>Annalen der Physik</jtitle><addtitle>Ann. Phys</addtitle><date>2011-08</date><risdate>2011</risdate><volume>523</volume><issue>8-9</issue><spage>599</spage><epage>611</epage><pages>599-611</pages><issn>0003-3804</issn><eissn>1521-3889</eissn><coden>ANPYA2</coden><abstract>The metal‐insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On‐site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side. Continuous stress tuning allows the observation of finite‐temperature dynamic scaling of σ (T,S) and hence a reliable determination of the critical exponent μ of the extrapolated zero‐temperature conductivity σ (0) ∼ | S ‐ Sc |μ, i.e., μ = 1, and of the dynamical exponent z = 3. The issue of half‐filling vs. away from half‐filling of the donor band (i.e., uncompensated vs. compensated semiconductors) is discussed in detail.
The metal‐insulator (MI) transition in Si:P can be tuned by varying the P concentration or – for barely insulating samples – by application of uniaxial stress S. On‐site Coulomb interactions lead to the formation of localized magnetic moments and the Kondo effect on the metallic side, and to a Hubbard splitting of the donor band on the insulating side.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/andp.201100034</doi><tpages>13</tpages></addata></record> |
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| language | eng |
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| source | Wiley Online Library - AutoHoldings Journals |
| subjects | Coulomb friction critical behavior dynamic scaling electrical conductivity electron-electron interaction heavily doped silicon Hubbard splitting Insulators Kondo effect Lead (metal) Metal-insulator transition Semiconductors specific heat Splitting Stress concentration Stresses thermoelectric power |
| title | Electron-electron interactions and the metal-insulator transition in heavily doped silicon |
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