Novel Low-Power and Highly Reliable Radiation Hardened Memory Cell for 65 nm CMOS Technology

In this paper, a novel low-power and highly reliable radiation hardened memory cell (RHM-12T) using 12 transistors is proposed to provide enough immunity against single event upset in TSMC 65 nm CMOS technology. The obtained results show that the proposed cell can not only tolerate upset at its any...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2014-07, Vol.61 (7), p.1994-2001
Hauptverfasser: Guo, Jing, Xiao, Liyi, Mao, Zhigang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!