Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition

Noise properties of beryllium delta-doped GaAs/AlAs multiple quantum wells, doped both above and below the Mott transition, are studied within the frequency range of 10 Hz−20 kHz and at temperature from 77 K to 350 K. It is shown that the generation-recombination noise in structures close to the Mot...

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Veröffentlicht in:	Journal of applied physics 2013-02, Vol.113 (8)
Hauptverfasser:	Palenskis, V., Matukas, J., Pralgauskaitė, S., Seliuta, D., Kašalynas, I., Subačius, L., Valušis, G., Khanna, S. P., Linfield, E. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Beryllium Broadband Frequency ranges Gallium arsenide Gallium arsenides Noise Quantum wells Tunnelling
Online-Zugang:	Volltext
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