Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition

Noise properties of beryllium delta-doped GaAs/AlAs multiple quantum wells, doped both above and below the Mott transition, are studied within the frequency range of 10 Hz−20 kHz and at temperature from 77 K to 350 K. It is shown that the generation-recombination noise in structures close to the Mot...

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Veröffentlicht in:	Journal of applied physics 2013-02, Vol.113 (8)
Hauptverfasser:	Palenskis, V., Matukas, J., Pralgauskaitė, S., Seliuta, D., Kašalynas, I., Subačius, L., Valušis, G., Khanna, S. P., Linfield, E. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Beryllium Broadband Frequency ranges Gallium arsenide Gallium arsenides Noise Quantum wells Tunnelling
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container_title	Journal of applied physics
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creator	Palenskis, V. Matukas, J. Pralgauskaitė, S. Seliuta, D. Kašalynas, I. Subačius, L. Valušis, G. Khanna, S. P. Linfield, E. H.
description	Noise properties of beryllium delta-doped GaAs/AlAs multiple quantum wells, doped both above and below the Mott transition, are studied within the frequency range of 10 Hz−20 kHz and at temperature from 77 K to 350 K. It is shown that the generation-recombination noise in structures close to the Mott transition exhibits two peaks—a frequency and temperature-dependent peak between 120 and 180 K and a broadband, frequency- and temperature- nearly independent peak around 270 K. Activation energies are estimated; origin of the broadband maximum is attributed to holes tunnelling into defect trap states located in the AlAs barrier/GaAs quantum well interface.
doi_str_mv	10.1063/1.4792741
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Activation energies are estimated; origin of the broadband maximum is attributed to holes tunnelling into defect trap states located in the AlAs barrier/GaAs quantum well interface.</description><subject>Beryllium</subject><subject>Broadband</subject><subject>Frequency ranges</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Noise</subject><subject>Quantum wells</subject><subject>Tunnelling</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotUL1OwzAYtBBIlMLAG3iEIa2_OInjMaqgIBWxwBzZzmdhlMat7ajqe_EcPBNB7XTD_ejuCLkHtgBW8SUsCiFzUcAFmQGrZSbKkl2SGWM5ZLUU8prcxPjNGEDN5Yzgxh8yG3A_4mCOdPAuIt0Fv8OQHEbqLdUYjn3vxi39_cm6ienoWjVx2fRNpPtRDWmiDtj3kQ6oAk1fSN98SjQFNUSXnB9uyZVVfcS7M87J5_PTx-ol27yvX1fNJjO5FCnjHEBLYFYXndbGFLYQaMEWmHegjbUcqrpQOe9EVxluDNSTIe-0ELmutORz8nDKnRZMi2Jqty6aqZoa0I-xhbKUVQm8hkn6eJKa4GMMaNtdcFsVji2w9v_KFtrzlfwPhLFoKw</recordid><startdate>20130228</startdate><enddate>20130228</enddate><creator>Palenskis, V.</creator><creator>Matukas, J.</creator><creator>Pralgauskaitė, S.</creator><creator>Seliuta, D.</creator><creator>Kašalynas, I.</creator><creator>Subačius, L.</creator><creator>Valušis, G.</creator><creator>Khanna, S. 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source	AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects	Beryllium Broadband Frequency ranges Gallium arsenide Gallium arsenides Noise Quantum wells Tunnelling
title	Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition
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