Direct k-space mapping of the electronic structure in an oxide-oxide interface
The interface between LaAlO(3) and SrTiO(3) hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that...
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Veröffentlicht in: | Physical review letters 2013-06, Vol.110 (24), p.247601-247601, Article 247601 |
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creator | Berner, G Sing, M Fujiwara, H Yasui, A Saitoh, Y Yamasaki, A Nishitani, Y Sekiyama, A Pavlenko, N Kopp, T Richter, C Mannhart, J Suga, S Claessen, R |
description | The interface between LaAlO(3) and SrTiO(3) hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O vacancies in the SrTiO(3). While photovoltage effects in the polar LaAlO(3) layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO(3) is compensated by surface O vacancies serving also as a charge reservoir. |
doi_str_mv | 10.1103/PhysRevLett.110.247601 |
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While photovoltage effects in the polar LaAlO(3) layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO(3) is compensated by surface O vacancies serving also as a charge reservoir.</description><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpNkEtPwzAQhC0EouXxFyofuaTsOnFcH1F5ShUgBOfI8YMG0iTYDqL_npQWxGVXmp3ZkT5CJghTREjPH5fr8GQ_FzbGjTBlmcgB98gYQchEIGb7ZAyQYiIBxIgchfAGAMjy2SEZMY45lzmOyf1l5a2O9D0JndKWrlTXVc0rbR2NS0ttPRx921Sahuh7HXtvadVQ1dD2qzI2-ZmDEq13Q_6EHDhVB3u628fk5frqeX6bLB5u7uYXi0SneRaTUkAumeACjHRGSQFulmZCMGYdlEahylVppOEISpYuM6U2iEZp4zgTTKbH5Gz7t_PtR29DLFZV0LauVWPbPhTI-YyzLBV8sOZbq_ZtCN66ovPVSvl1gVBsWBb_WG6EYstyCE52HX25suYv9gsv_QYxPnO0</recordid><startdate>20130614</startdate><enddate>20130614</enddate><creator>Berner, G</creator><creator>Sing, M</creator><creator>Fujiwara, H</creator><creator>Yasui, A</creator><creator>Saitoh, Y</creator><creator>Yamasaki, A</creator><creator>Nishitani, Y</creator><creator>Sekiyama, A</creator><creator>Pavlenko, N</creator><creator>Kopp, T</creator><creator>Richter, C</creator><creator>Mannhart, J</creator><creator>Suga, S</creator><creator>Claessen, R</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20130614</creationdate><title>Direct k-space mapping of the electronic structure in an oxide-oxide interface</title><author>Berner, G ; Sing, M ; Fujiwara, H ; Yasui, A ; Saitoh, Y ; Yamasaki, A ; Nishitani, Y ; Sekiyama, A ; Pavlenko, N ; Kopp, T ; Richter, C ; Mannhart, J ; Suga, S ; Claessen, R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-b706927570d9fda970f8347722ef0bda1a6abd9d510a9bf4dbcd11dacdf527293</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Berner, G</creatorcontrib><creatorcontrib>Sing, M</creatorcontrib><creatorcontrib>Fujiwara, H</creatorcontrib><creatorcontrib>Yasui, A</creatorcontrib><creatorcontrib>Saitoh, Y</creatorcontrib><creatorcontrib>Yamasaki, A</creatorcontrib><creatorcontrib>Nishitani, Y</creatorcontrib><creatorcontrib>Sekiyama, A</creatorcontrib><creatorcontrib>Pavlenko, N</creatorcontrib><creatorcontrib>Kopp, T</creatorcontrib><creatorcontrib>Richter, C</creatorcontrib><creatorcontrib>Mannhart, J</creatorcontrib><creatorcontrib>Suga, S</creatorcontrib><creatorcontrib>Claessen, R</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Berner, G</au><au>Sing, M</au><au>Fujiwara, H</au><au>Yasui, A</au><au>Saitoh, Y</au><au>Yamasaki, A</au><au>Nishitani, Y</au><au>Sekiyama, A</au><au>Pavlenko, N</au><au>Kopp, T</au><au>Richter, C</au><au>Mannhart, J</au><au>Suga, S</au><au>Claessen, R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Direct k-space mapping of the electronic structure in an oxide-oxide interface</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2013-06-14</date><risdate>2013</risdate><volume>110</volume><issue>24</issue><spage>247601</spage><epage>247601</epage><pages>247601-247601</pages><artnum>247601</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>The interface between LaAlO(3) and SrTiO(3) hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. 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While photovoltage effects in the polar LaAlO(3) layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO(3) is compensated by surface O vacancies serving also as a charge reservoir.</abstract><cop>United States</cop><pmid>25165961</pmid><doi>10.1103/PhysRevLett.110.247601</doi><tpages>1</tpages></addata></record> |
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title | Direct k-space mapping of the electronic structure in an oxide-oxide interface |
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