Replenish and relax: explaining logarithmic annealing in ion-implanted c-Si

We study ion-damaged crystalline silicon by combining nanocalorimetric experiments with an off-lattice kinetic Monte Carlo simulation to identify the atomistic mechanisms responsible for the structural relaxation over long time scales. We relate the logarithmic relaxation, observed in a number of di...

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Veröffentlicht in:	Physical review letters 2013-09, Vol.111 (10), p.105502-105502, Article 105502
Hauptverfasser:	Béland, Laurent Karim, Anahory, Yonathan, Smeets, Dries, Guihard, Matthieu, Brommer, Peter, Joly, Jean-François, Pothier, Jean-Christophe, Lewis, Laurent J, Mousseau, Normand, Schiettekatte, François
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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