1/f noise in forward biased high voltage 4H-SiC Schottky diodes
•The 1/f noise in high-quality 4H-SiC Schottky diodes has been studied firstly.•At 300K, diodes demonstrate a “nearly ideal” behavior with ideality factor 1.03.•At 77K, I-V and noise characteristics manifest barrier height distribution.•At 77K, the 1/f noise is generated in the parts of low barrier...
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| Veröffentlicht in: | Solid-state electronics 2014-06, Vol.96, p.44-47 |
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| creator | Shabunina, Eugenia I. Levinshtein, Michael E. Shmidt, Natalia M. Ivanov, Pavel A. Palmour, John W. |
| description | •The 1/f noise in high-quality 4H-SiC Schottky diodes has been studied firstly.•At 300K, diodes demonstrate a “nearly ideal” behavior with ideality factor 1.03.•At 77K, I-V and noise characteristics manifest barrier height distribution.•At 77K, the 1/f noise is generated in the parts of low barrier height.
The 1/f noise has been investigated for the first time at 300 and 77K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode with a comparatively high barrier and the current flowing through the nano-sized patches with a comparatively low barrier. |
| doi_str_mv | 10.1016/j.sse.2014.03.008 |
| format | Article |
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The 1/f noise has been investigated for the first time at 300 and 77K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode with a comparatively high barrier and the current flowing through the nano-sized patches with a comparatively low barrier.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2014.03.008</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Barrier-height nonuniformity ; Barriers ; Density ; Diodes ; High voltages ; Low-frequency noise ; Nanostructure ; Noise ; Schottky diodes ; Silicon carbide ; Spectra</subject><ispartof>Solid-state electronics, 2014-06, Vol.96, p.44-47</ispartof><rights>2014 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-280eb5166b81d02b6764d6045d97fd14333ee23688a775f9cb24003d1be2c5c3</citedby><cites>FETCH-LOGICAL-c330t-280eb5166b81d02b6764d6045d97fd14333ee23688a775f9cb24003d1be2c5c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110114000458$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Shabunina, Eugenia I.</creatorcontrib><creatorcontrib>Levinshtein, Michael E.</creatorcontrib><creatorcontrib>Shmidt, Natalia M.</creatorcontrib><creatorcontrib>Ivanov, Pavel A.</creatorcontrib><creatorcontrib>Palmour, John W.</creatorcontrib><title>1/f noise in forward biased high voltage 4H-SiC Schottky diodes</title><title>Solid-state electronics</title><description>•The 1/f noise in high-quality 4H-SiC Schottky diodes has been studied firstly.•At 300K, diodes demonstrate a “nearly ideal” behavior with ideality factor 1.03.•At 77K, I-V and noise characteristics manifest barrier height distribution.•At 77K, the 1/f noise is generated in the parts of low barrier height.
The 1/f noise has been investigated for the first time at 300 and 77K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode with a comparatively high barrier and the current flowing through the nano-sized patches with a comparatively low barrier.</description><subject>Barrier-height nonuniformity</subject><subject>Barriers</subject><subject>Density</subject><subject>Diodes</subject><subject>High voltages</subject><subject>Low-frequency noise</subject><subject>Nanostructure</subject><subject>Noise</subject><subject>Schottky diodes</subject><subject>Silicon carbide</subject><subject>Spectra</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQQC0EEqXwA9g8siS9s_PhigGhCihSJYZ2txL70rqkcbFTUP89qcrMdMt7p7vH2D1CioDFZJvGSKkAzFKQKYC6YCNU5TQRGeSXbAQgVYIDes1uYtwCgCgQRuwJJw3vvIvEXccbH36qYHntqkiWb9x6w79921dr4tk8WboZX5qN7_vPI7fOW4q37Kqp2kh3f3PMVq8vq9k8WXy8vc-eF4mREvpEKKA6x6KoFVoQdVEWmS0gy-20bCxmUkoiIQulqrLMm6mph7tBWqxJmNzIMXs4r90H_3Wg2Oudi4baturIH6LGPEdQUikxoHhGTfAxBmr0PrhdFY4aQZ9a6a0eWulTKw1SD60G5_Hs0PDCt6Ogo3HUGbIukOm19e4f-xfjzm8j</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Shabunina, Eugenia I.</creator><creator>Levinshtein, Michael E.</creator><creator>Shmidt, Natalia M.</creator><creator>Ivanov, Pavel A.</creator><creator>Palmour, John W.</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20140601</creationdate><title>1/f noise in forward biased high voltage 4H-SiC Schottky diodes</title><author>Shabunina, Eugenia I. ; Levinshtein, Michael E. ; Shmidt, Natalia M. ; Ivanov, Pavel A. ; Palmour, John W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-280eb5166b81d02b6764d6045d97fd14333ee23688a775f9cb24003d1be2c5c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Barrier-height nonuniformity</topic><topic>Barriers</topic><topic>Density</topic><topic>Diodes</topic><topic>High voltages</topic><topic>Low-frequency noise</topic><topic>Nanostructure</topic><topic>Noise</topic><topic>Schottky diodes</topic><topic>Silicon carbide</topic><topic>Spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shabunina, Eugenia I.</creatorcontrib><creatorcontrib>Levinshtein, Michael E.</creatorcontrib><creatorcontrib>Shmidt, Natalia M.</creatorcontrib><creatorcontrib>Ivanov, Pavel A.</creatorcontrib><creatorcontrib>Palmour, John W.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shabunina, Eugenia I.</au><au>Levinshtein, Michael E.</au><au>Shmidt, Natalia M.</au><au>Ivanov, Pavel A.</au><au>Palmour, John W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1/f noise in forward biased high voltage 4H-SiC Schottky diodes</atitle><jtitle>Solid-state electronics</jtitle><date>2014-06-01</date><risdate>2014</risdate><volume>96</volume><spage>44</spage><epage>47</epage><pages>44-47</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>•The 1/f noise in high-quality 4H-SiC Schottky diodes has been studied firstly.•At 300K, diodes demonstrate a “nearly ideal” behavior with ideality factor 1.03.•At 77K, I-V and noise characteristics manifest barrier height distribution.•At 77K, the 1/f noise is generated in the parts of low barrier height.
The 1/f noise has been investigated for the first time at 300 and 77K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode with a comparatively high barrier and the current flowing through the nano-sized patches with a comparatively low barrier.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2014.03.008</doi><tpages>4</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Barrier-height nonuniformity Barriers Density Diodes High voltages Low-frequency noise Nanostructure Noise Schottky diodes Silicon carbide Spectra |
| title | 1/f noise in forward biased high voltage 4H-SiC Schottky diodes |
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