Latest Technology of Stress Buffer Material for Semiconductor Application
Because polyimide (PI) / polybenzoxazole (PBO) materials make semiconductor reliability drastically improved, they have been applied to stress buffer layer for over 30 years. Their purpose used to prevent IC chip from mechanical attack by molding compound filler. In recent years, PI / PBO are requir...
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| Veröffentlicht in: | NIPPON GOMU KYOKAISHI 2012, Vol.85(2), pp.40-45 |
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| container_title | NIPPON GOMU KYOKAISHI |
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| creator | Katoh, Kohji |
| description | Because polyimide (PI) / polybenzoxazole (PBO) materials make semiconductor reliability drastically improved, they have been applied to stress buffer layer for over 30 years. Their purpose used to prevent IC chip from mechanical attack by molding compound filler. In recent years, PI / PBO are required to perform stress relief. In addition to this, they have come to be used as dielectric layer for Cu redistribution layer application as semiconductor package type changes. Therefore, various properties and balanced performances are necessary for PI / PBO materials. This paper reviews latest PI / PBO technologies in semiconductor application. |
| doi_str_mv | 10.2324/gomu.85.40 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1551073532</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1551073532</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1990-e04f63c88f918e9e176327a878fd943a48e85c663e3b55de7e20cb4a147bdecf3</originalsourceid><addsrcrecordid>eNo90D1rwzAQBmANLTSkWfoLPJaCU33a0tAhDW0aSOmQFLoJRT4lDrblSvaQf18Hl9xy3PFwHC9CDwTPKaP8-eDrfi7FnOMbNMGYqhRT-nOHZjGe8FBMKsLZBK03poPYJTuwx8ZX_nBOvEu2XYAYk9feOQjJ50BCaarE-ZBsoS6tb4redsO0aNuqtKYrfXOPbp2pIsz--xR9v7_tlh_p5mu1Xi42qSVK4RQwdxmzUjpFJCggecZobmQuXaE4M1yCFDbLGLC9EAXkQLHdc0N4vi_AOjZFj-PdNvjffvhd12W0UFWmAd9HTYQgOGeC0YE-jdQGH2MAp9tQ1iacNcH6EpO-xKSl0BwP-GXEp9iZA1ypCV1pK7hSOvrr3h5N0NCwPyvSdCY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1551073532</pqid></control><display><type>article</type><title>Latest Technology of Stress Buffer Material for Semiconductor Application</title><source>EZB-FREE-00999 freely available EZB journals</source><creator>Katoh, Kohji</creator><creatorcontrib>Katoh, Kohji</creatorcontrib><description>Because polyimide (PI) / polybenzoxazole (PBO) materials make semiconductor reliability drastically improved, they have been applied to stress buffer layer for over 30 years. Their purpose used to prevent IC chip from mechanical attack by molding compound filler. In recent years, PI / PBO are required to perform stress relief. In addition to this, they have come to be used as dielectric layer for Cu redistribution layer application as semiconductor package type changes. Therefore, various properties and balanced performances are necessary for PI / PBO materials. This paper reviews latest PI / PBO technologies in semiconductor application.</description><identifier>ISSN: 0029-022X</identifier><identifier>DOI: 10.2324/gomu.85.40</identifier><language>eng</language><publisher>THE SOCIRETY OF RUBBER SCIENCE AND TECHNOLOGYY, JAPAN</publisher><subject>Adhesive ; Balancing ; Buffers ; Cu Redistribution ; Dielectrics ; Integrated circuits ; Packages ; Polybenzoxazole ; Polyimide ; Polyimide resins ; Semiconductors ; Stress Buffer ; Stresses ; Wafer Level Packaging</subject><ispartof>NIPPON GOMU KYOKAISHI, 2012, Vol.85(2), pp.40-45</ispartof><rights>2012 The Society of Rubber Industry, Japan</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1990-e04f63c88f918e9e176327a878fd943a48e85c663e3b55de7e20cb4a147bdecf3</citedby><cites>FETCH-LOGICAL-c1990-e04f63c88f918e9e176327a878fd943a48e85c663e3b55de7e20cb4a147bdecf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,4025,27928,27929,27930</link.rule.ids></links><search><creatorcontrib>Katoh, Kohji</creatorcontrib><title>Latest Technology of Stress Buffer Material for Semiconductor Application</title><title>NIPPON GOMU KYOKAISHI</title><addtitle>NIPPON GOMU KYOKAISHI</addtitle><description>Because polyimide (PI) / polybenzoxazole (PBO) materials make semiconductor reliability drastically improved, they have been applied to stress buffer layer for over 30 years. Their purpose used to prevent IC chip from mechanical attack by molding compound filler. In recent years, PI / PBO are required to perform stress relief. In addition to this, they have come to be used as dielectric layer for Cu redistribution layer application as semiconductor package type changes. Therefore, various properties and balanced performances are necessary for PI / PBO materials. This paper reviews latest PI / PBO technologies in semiconductor application.</description><subject>Adhesive</subject><subject>Balancing</subject><subject>Buffers</subject><subject>Cu Redistribution</subject><subject>Dielectrics</subject><subject>Integrated circuits</subject><subject>Packages</subject><subject>Polybenzoxazole</subject><subject>Polyimide</subject><subject>Polyimide resins</subject><subject>Semiconductors</subject><subject>Stress Buffer</subject><subject>Stresses</subject><subject>Wafer Level Packaging</subject><issn>0029-022X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo90D1rwzAQBmANLTSkWfoLPJaCU33a0tAhDW0aSOmQFLoJRT4lDrblSvaQf18Hl9xy3PFwHC9CDwTPKaP8-eDrfi7FnOMbNMGYqhRT-nOHZjGe8FBMKsLZBK03poPYJTuwx8ZX_nBOvEu2XYAYk9feOQjJ50BCaarE-ZBsoS6tb4redsO0aNuqtKYrfXOPbp2pIsz--xR9v7_tlh_p5mu1Xi42qSVK4RQwdxmzUjpFJCggecZobmQuXaE4M1yCFDbLGLC9EAXkQLHdc0N4vi_AOjZFj-PdNvjffvhd12W0UFWmAd9HTYQgOGeC0YE-jdQGH2MAp9tQ1iacNcH6EpO-xKSl0BwP-GXEp9iZA1ypCV1pK7hSOvrr3h5N0NCwPyvSdCY</recordid><startdate>2012</startdate><enddate>2012</enddate><creator>Katoh, Kohji</creator><general>THE SOCIRETY OF RUBBER SCIENCE AND TECHNOLOGYY, JAPAN</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2012</creationdate><title>Latest Technology of Stress Buffer Material for Semiconductor Application</title><author>Katoh, Kohji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1990-e04f63c88f918e9e176327a878fd943a48e85c663e3b55de7e20cb4a147bdecf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Adhesive</topic><topic>Balancing</topic><topic>Buffers</topic><topic>Cu Redistribution</topic><topic>Dielectrics</topic><topic>Integrated circuits</topic><topic>Packages</topic><topic>Polybenzoxazole</topic><topic>Polyimide</topic><topic>Polyimide resins</topic><topic>Semiconductors</topic><topic>Stress Buffer</topic><topic>Stresses</topic><topic>Wafer Level Packaging</topic><toplevel>online_resources</toplevel><creatorcontrib>Katoh, Kohji</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>NIPPON GOMU KYOKAISHI</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Katoh, Kohji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Latest Technology of Stress Buffer Material for Semiconductor Application</atitle><jtitle>NIPPON GOMU KYOKAISHI</jtitle><addtitle>NIPPON GOMU KYOKAISHI</addtitle><date>2012</date><risdate>2012</risdate><volume>85</volume><issue>2</issue><spage>40</spage><epage>45</epage><pages>40-45</pages><issn>0029-022X</issn><abstract>Because polyimide (PI) / polybenzoxazole (PBO) materials make semiconductor reliability drastically improved, they have been applied to stress buffer layer for over 30 years. Their purpose used to prevent IC chip from mechanical attack by molding compound filler. In recent years, PI / PBO are required to perform stress relief. In addition to this, they have come to be used as dielectric layer for Cu redistribution layer application as semiconductor package type changes. Therefore, various properties and balanced performances are necessary for PI / PBO materials. This paper reviews latest PI / PBO technologies in semiconductor application.</abstract><pub>THE SOCIRETY OF RUBBER SCIENCE AND TECHNOLOGYY, JAPAN</pub><doi>10.2324/gomu.85.40</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | NIPPON GOMU KYOKAISHI, 2012, Vol.85(2), pp.40-45 |
| issn | 0029-022X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1551073532 |
| source | EZB-FREE-00999 freely available EZB journals |
| subjects | Adhesive Balancing Buffers Cu Redistribution Dielectrics Integrated circuits Packages Polybenzoxazole Polyimide Polyimide resins Semiconductors Stress Buffer Stresses Wafer Level Packaging |
| title | Latest Technology of Stress Buffer Material for Semiconductor Application |
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