Single-chip InGaN green light-emitting diodes with 3W optical output power
The characteristics of a high-power single-chip green light-emitting diode (LED) operating with a >40 W input power are reported. The single-chip large area LED chip, which consists of 24 stages, was fabricated by using commercial wafers with chip dimensions of 6.5 × 5 mm^sup 2^. The electrical a...
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| Veröffentlicht in: | Electronics letters 2014-03, Vol.50 (6), p.464-464 |
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| container_title | Electronics letters |
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| creator | Wang, Wei Cai, Yong Huang, Juan Hong Huang, Wei Li, Haiou Lin, Xin Zhou, Ximing Zhang, Baosun |
| description | The characteristics of a high-power single-chip green light-emitting diode (LED) operating with a >40 W input power are reported. The single-chip large area LED chip, which consists of 24 stages, was fabricated by using commercial wafers with chip dimensions of 6.5 × 5 mm^sup 2^. The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Optical output power and forward voltage at 500 mA were obtained to be 3 W and 83 V, respectively, which demonstrates an external quantum efficiency (EQE) of 10.4% with a 41.5 W input power. [PUBLICATION ABSTRACT] |
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The single-chip large area LED chip, which consists of 24 stages, was fabricated by using commercial wafers with chip dimensions of 6.5 × 5 mm^sup 2^. The electrical and optical characteristics of the LED were measured up to a 500 mA injection current under direct operation conditions. Optical output power and forward voltage at 500 mA were obtained to be 3 W and 83 V, respectively, which demonstrates an external quantum efficiency (EQE) of 10.4% with a 41.5 W input power. [PUBLICATION ABSTRACT]</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>Stevenage: John Wiley & Sons, Inc</publisher><subject>Chip formation ; Chips ; Electric potential ; Electric power generation ; Indium gallium nitrides ; Injection current ; Light-emitting diodes ; Voltage</subject><ispartof>Electronics letters, 2014-03, Vol.50 (6), p.464-464</ispartof><rights>Copyright The Institution of Engineering & Technology Mar 13, 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780</link.rule.ids></links><search><creatorcontrib>Wang, Wei</creatorcontrib><creatorcontrib>Cai, Yong</creatorcontrib><creatorcontrib>Huang, Juan Hong</creatorcontrib><creatorcontrib>Huang, Wei</creatorcontrib><creatorcontrib>Li, Haiou</creatorcontrib><creatorcontrib>Lin, Xin</creatorcontrib><creatorcontrib>Zhou, Ximing</creatorcontrib><creatorcontrib>Zhang, Baosun</creatorcontrib><title>Single-chip InGaN green light-emitting diodes with 3W optical output power</title><title>Electronics letters</title><description>The characteristics of a high-power single-chip green light-emitting diode (LED) operating with a >40 W input power are reported. 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[PUBLICATION ABSTRACT]</description><subject>Chip formation</subject><subject>Chips</subject><subject>Electric potential</subject><subject>Electric power generation</subject><subject>Indium gallium nitrides</subject><subject>Injection current</subject><subject>Light-emitting diodes</subject><subject>Voltage</subject><issn>0013-5194</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNpdzk9LwzAYBvAgCs7pdwh48RJ4869djjJ0ToYeHOhtNOnbNqNrYpOyr29BT54eHvjx8FyQBZcamOH865IsALhkmht1TW5SOs5VGFMuyOuHH9oemet8pNthU73RdkQcaO_bLjM8-ZxnQWsfakz07HNH5ScNMXtX9TRMOU6ZxnDG8ZZcNVWf8O4vl2T__LRfv7Dd-2a7ftyxWHDFGgtSFKJwBQJYVzrh0JZKOauMA4OV0LY0jeDgBK9r0KDQaBAWtBCwcnJJHn5n4xi-J0z5cPLJYd9XA4YpHbjWHLQRUs30_h89hmkc5nOzErrUK1Nq-QMVQFaF</recordid><startdate>20140313</startdate><enddate>20140313</enddate><creator>Wang, Wei</creator><creator>Cai, Yong</creator><creator>Huang, Juan Hong</creator><creator>Huang, Wei</creator><creator>Li, Haiou</creator><creator>Lin, Xin</creator><creator>Zhou, Ximing</creator><creator>Zhang, Baosun</creator><general>John Wiley & Sons, Inc</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20140313</creationdate><title>Single-chip InGaN green light-emitting diodes with 3W optical output power</title><author>Wang, Wei ; 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| fulltext | fulltext |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2014-03, Vol.50 (6), p.464-464 |
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| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Wiley Online Library Open Access; Alma/SFX Local Collection |
| subjects | Chip formation Chips Electric potential Electric power generation Indium gallium nitrides Injection current Light-emitting diodes Voltage |
| title | Single-chip InGaN green light-emitting diodes with 3W optical output power |
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