Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors

•Liquid crystal was applied on top of the SiN passivation surface of AlGaN/GaN HEMT.•Transmitted light in source–drain region was recorded through crossed polarizers.•Decrease in transmitted light intensity with increased source–drain bias was recorded.•Liquid crystal molecules shown to orientate wi...

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Veröffentlicht in:	Microelectronics and reliability 2014-05, Vol.54 (5), p.921-925
Hauptverfasser:	Möreke, Janina, Hodges, Chris, Mears, Laura L.E., Uren, Michael J., Richardson, Robert M., Kuball, Martin
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied sciences Devices Electric field strength Electric fields Electronics Exact sciences and technology Gallium nitrides High electron mobility transistors Liquid crystals Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Transistors
Online-Zugang:	Volltext
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