Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors

Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2014-06, Vol.115 (4), p.1103-1107
Hauptverfasser: Schulz, Leander, Yun, Eui-Jung, Dodabalapur, Ananth
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container_title Applied physics. A, Materials science & processing
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creator Schulz, Leander
Yun, Eui-Jung
Dodabalapur, Ananth
description Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general.
doi_str_mv 10.1007/s00339-014-8422-3
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1551045444</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1551045444</sourcerecordid><originalsourceid>FETCH-LOGICAL-c321t-87e4d75059848347f6253e864eb8c3e6ba8d1c2824a3f27a03fed216ed4c50d83</originalsourceid><addsrcrecordid>eNp9kcuOFDEMRSMEEs3AB7DLkk0gr6pKL9FoeEgjsYF15E450xlVJYWTRsCP8LukVazxxrJ1rh-6jL1W8q2ScnpXpTTmKKSywlmthXnCDsoaLeRo5FN2kEc7CWeO43P2otZH2aNjB_bnLkYMrfISeSi5QWicsKbaIAfkJfN2Ro4_YLlAS728cmegB-QBiBISX8spLaklrBzyzBtBrluhxjcgWLEhVZ4yh7XQdi6Xyn-nHHjrrfIzzdgXpCxiWtZd2lcXqi_ZswhLxVf_8g379uHu6-0ncf_l4-fb9_ciGK2acBPaeRrkcHTWGTvFUQ8G3Wjx5ILB8QRuVkE7bcFEPYE0EWetRpxtGOTszA17s8_dqHy_YG1-TTXgskDGfqtXw6CkHay1HVU7GqjUShj9RmkF-uWV9FcT_G6C7yb4qwnedI3eNbWz-QHJP5YL5f7Rf0R_AcfCjYs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1551045444</pqid></control><display><type>article</type><title>Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors</title><source>SpringerNature Journals</source><creator>Schulz, Leander ; Yun, Eui-Jung ; Dodabalapur, Ananth</creator><creatorcontrib>Schulz, Leander ; Yun, Eui-Jung ; Dodabalapur, Ananth</creatorcontrib><description>Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-014-8422-3</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Characterization and Evaluation of Materials ; Charge carriers ; Charge transport ; Condensed Matter Physics ; Contact ; Contact resistance ; Electric potential ; Machines ; Manufacturing ; Nanotechnology ; Optical and Electronic Materials ; Physics ; Physics and Astronomy ; Processes ; Rapid Communication ; Surfaces and Interfaces ; Thin Films ; Transistors ; Voltage ; Zinc</subject><ispartof>Applied physics. A, Materials science &amp; processing, 2014-06, Vol.115 (4), p.1103-1107</ispartof><rights>Springer-Verlag Berlin Heidelberg 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-87e4d75059848347f6253e864eb8c3e6ba8d1c2824a3f27a03fed216ed4c50d83</citedby><cites>FETCH-LOGICAL-c321t-87e4d75059848347f6253e864eb8c3e6ba8d1c2824a3f27a03fed216ed4c50d83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s00339-014-8422-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s00339-014-8422-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Schulz, Leander</creatorcontrib><creatorcontrib>Yun, Eui-Jung</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><title>Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors</title><title>Applied physics. A, Materials science &amp; processing</title><addtitle>Appl. Phys. A</addtitle><description>Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general.</description><subject>Characterization and Evaluation of Materials</subject><subject>Charge carriers</subject><subject>Charge transport</subject><subject>Condensed Matter Physics</subject><subject>Contact</subject><subject>Contact resistance</subject><subject>Electric potential</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Rapid Communication</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Transistors</subject><subject>Voltage</subject><subject>Zinc</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kcuOFDEMRSMEEs3AB7DLkk0gr6pKL9FoeEgjsYF15E450xlVJYWTRsCP8LukVazxxrJ1rh-6jL1W8q2ScnpXpTTmKKSywlmthXnCDsoaLeRo5FN2kEc7CWeO43P2otZH2aNjB_bnLkYMrfISeSi5QWicsKbaIAfkJfN2Ro4_YLlAS728cmegB-QBiBISX8spLaklrBzyzBtBrluhxjcgWLEhVZ4yh7XQdi6Xyn-nHHjrrfIzzdgXpCxiWtZd2lcXqi_ZswhLxVf_8g379uHu6-0ncf_l4-fb9_ciGK2acBPaeRrkcHTWGTvFUQ8G3Wjx5ILB8QRuVkE7bcFEPYE0EWetRpxtGOTszA17s8_dqHy_YG1-TTXgskDGfqtXw6CkHay1HVU7GqjUShj9RmkF-uWV9FcT_G6C7yb4qwnedI3eNbWz-QHJP5YL5f7Rf0R_AcfCjYs</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Schulz, Leander</creator><creator>Yun, Eui-Jung</creator><creator>Dodabalapur, Ananth</creator><general>Springer Berlin Heidelberg</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140601</creationdate><title>Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors</title><author>Schulz, Leander ; Yun, Eui-Jung ; Dodabalapur, Ananth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-87e4d75059848347f6253e864eb8c3e6ba8d1c2824a3f27a03fed216ed4c50d83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Charge carriers</topic><topic>Charge transport</topic><topic>Condensed Matter Physics</topic><topic>Contact</topic><topic>Contact resistance</topic><topic>Electric potential</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Rapid Communication</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>Transistors</topic><topic>Voltage</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schulz, Leander</creatorcontrib><creatorcontrib>Yun, Eui-Jung</creatorcontrib><creatorcontrib>Dodabalapur, Ananth</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science &amp; processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schulz, Leander</au><au>Yun, Eui-Jung</au><au>Dodabalapur, Ananth</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors</atitle><jtitle>Applied physics. A, Materials science &amp; processing</jtitle><stitle>Appl. Phys. A</stitle><date>2014-06-01</date><risdate>2014</risdate><volume>115</volume><issue>4</issue><spage>1103</spage><epage>1107</epage><pages>1103-1107</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Accurate determination of the charge transport characteristics of amorphous metal-oxide transistors requires the mitigation of the effects of contact resistance. The use of additional electrodes as voltage probes can overcome contact resistance-related limitations and yields accurate charge carrier mobility values, trap depths and temperature and carrier density dependencies of mobility as well as trap depths. We show that large differences in measured charge carrier mobility values are obtained when such contact resistances are not factored out. Upon exclusion of the contact resistance, the true temperature dependence of charge carrier mobility appears in the form of two clearly distinct mobility regimes. Analyzing these revealed mobility regions leads to a more accurate determination of the underlying transport physics, which shows that contact resistance-related artefacts yield incorrect trends of trap depth with gate voltage, potentially leading to a misconstruction of the charge transport picture. Furthermore, a comparison of low- and high-mobility samples indicates that the observed effects are more general.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-014-8422-3</doi><tpages>5</tpages></addata></record>
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source SpringerNature Journals
subjects Characterization and Evaluation of Materials
Charge carriers
Charge transport
Condensed Matter Physics
Contact
Contact resistance
Electric potential
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Rapid Communication
Surfaces and Interfaces
Thin Films
Transistors
Voltage
Zinc
title Effects of contact resistance on the evaluation of charge carrier mobilities and transport parameters in amorphous zinc tin oxide thin-film transistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T19%3A13%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20contact%20resistance%20on%20the%20evaluation%20of%20charge%20carrier%20mobilities%20and%20transport%20parameters%20in%20amorphous%20zinc%20tin%20oxide%20thin-film%20transistors&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Schulz,%20Leander&rft.date=2014-06-01&rft.volume=115&rft.issue=4&rft.spage=1103&rft.epage=1107&rft.pages=1103-1107&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s00339-014-8422-3&rft_dat=%3Cproquest_cross%3E1551045444%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1551045444&rft_id=info:pmid/&rfr_iscdi=true