Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions

A predictive compact model of p-MOSFET negative bias temperature instability (NBTI) degradation for circuit simulation is reported with unified description of the interface-state-generation and hole-trapping mechanisms. It is found that the hole-trapping is responsible for the initial stage of the s...

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