Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples

The results on structural damage in germanium wafers caused by hydrogen and helium implants of typical doses used in Smart Cut™ Technology (1–6 × 1016 atoms/cm2) are investigated using Raman mapping and spreading resistance profiling techniques. Raman line‐mapping measurements were performed up to t...

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Veröffentlicht in:	Journal of Raman spectroscopy 2012-03, Vol.43 (3), p.448-454
Hauptverfasser:	Wasyluk, J., Rainey, P. V., Perova, T. S., Mitchell, S. J. N., McNeill, D. W., Gamble, H. S., Armstrong, B. M., Hurley, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ge-on-insulator ion implantation micro-Raman spectroscopy Smart Cut spreading resistance profiling
Online-Zugang:	Volltext
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