Tunable Reverse-Biased Graphene/Silicon Heterojunction Schottky Diode Sensor

A new chemical sensor based on reverse‐biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias‐dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorpt...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2014-04, Vol.10 (8), p.1555-1565
Hauptverfasser:	Singh, Amol, Uddin, Md. Ahsan, Sudarshan, Tangali, Koley, Goutam
Format:	Artikel
Sprache:	eng
Schlagworte:	Barriers Bias capacitance-voltage measurements Devices Graphene graphene/Si heterojunction Heterojunctions Nanotechnology reverse bias Sensors Silicon Surface chemistry tunable
Online-Zugang:	Volltext
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