Enhancement of pressure-free bonding with Cu particles by the addition of Cu–Ni alloy nanoparticles
Cu-Ni alloy nanoparticles ( similar to 20 nm) were synthesized with precise control over the resulting Cu and Ni proportions. Nanoparticles composed of 29 wt% Cu and 71 wt% Ni exhibited significant resistance to surface oxidation and were readily sintered, suggesting that they could serve as bonding...
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Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2014-01, Vol.2 (18), p.3542-3548 |
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creator | Watanabe, Ryota Ishizaki, Toshitaka |
description | Cu-Ni alloy nanoparticles ( similar to 20 nm) were synthesized with precise control over the resulting Cu and Ni proportions. Nanoparticles composed of 29 wt% Cu and 71 wt% Ni exhibited significant resistance to surface oxidation and were readily sintered, suggesting that they could serve as bonding materials. The adhesive strength of Cu plates bonded by Cu particles of 150-200 nm in size was enhanced by adding these Cu-Ni alloy nanoparticles to the larger Cu particles. This is the first example of the use of base metal nanoparticles at a low-temperature (250 degree C) under pressure-free conditions to achieve bonding strengths equivalent to those obtained when applying the standard Pb-free solder (Sn-Ag-Cu). Furthermore, a sintered Cu film with good electric conductivity was obtained using the mixture of Cu-Ni nanoparticles and Cu particles. The enhanced properties of these bonded layers were due to the formation of a densely sintered layer resulting from the addition of the Cu-Ni alloy nanoparticles to the Cu paste. This method could potentially have applications in the electrical packaging industry, since it represents a simple, economical process that results in highly conductive bonds. |
doi_str_mv | 10.1039/c4tc00240g |
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Nanoparticles composed of 29 wt% Cu and 71 wt% Ni exhibited significant resistance to surface oxidation and were readily sintered, suggesting that they could serve as bonding materials. The adhesive strength of Cu plates bonded by Cu particles of 150-200 nm in size was enhanced by adding these Cu-Ni alloy nanoparticles to the larger Cu particles. This is the first example of the use of base metal nanoparticles at a low-temperature (250 degree C) under pressure-free conditions to achieve bonding strengths equivalent to those obtained when applying the standard Pb-free solder (Sn-Ag-Cu). Furthermore, a sintered Cu film with good electric conductivity was obtained using the mixture of Cu-Ni nanoparticles and Cu particles. The enhanced properties of these bonded layers were due to the formation of a densely sintered layer resulting from the addition of the Cu-Ni alloy nanoparticles to the Cu paste. This method could potentially have applications in the electrical packaging industry, since it represents a simple, economical process that results in highly conductive bonds.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/c4tc00240g</identifier><language>eng</language><subject>Alloy plating ; Alloying additive ; Binary systems ; BONDING ; COPPER ALLOYS (40 TO 99.3 CU) ; Copper base alloys ; Copper |m Binary systems ; Electrical conductivity ; Nanoparticles ; Nickel |m Binary systems ; PARTICLES ; PLATING ; SINTERING</subject><ispartof>Journal of materials chemistry. 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C, Materials for optical and electronic devices</title><description>Cu-Ni alloy nanoparticles ( similar to 20 nm) were synthesized with precise control over the resulting Cu and Ni proportions. Nanoparticles composed of 29 wt% Cu and 71 wt% Ni exhibited significant resistance to surface oxidation and were readily sintered, suggesting that they could serve as bonding materials. The adhesive strength of Cu plates bonded by Cu particles of 150-200 nm in size was enhanced by adding these Cu-Ni alloy nanoparticles to the larger Cu particles. This is the first example of the use of base metal nanoparticles at a low-temperature (250 degree C) under pressure-free conditions to achieve bonding strengths equivalent to those obtained when applying the standard Pb-free solder (Sn-Ag-Cu). Furthermore, a sintered Cu film with good electric conductivity was obtained using the mixture of Cu-Ni nanoparticles and Cu particles. The enhanced properties of these bonded layers were due to the formation of a densely sintered layer resulting from the addition of the Cu-Ni alloy nanoparticles to the Cu paste. This method could potentially have applications in the electrical packaging industry, since it represents a simple, economical process that results in highly conductive bonds.</description><subject>Alloy plating</subject><subject>Alloying additive</subject><subject>Binary systems</subject><subject>BONDING</subject><subject>COPPER ALLOYS (40 TO 99.3 CU)</subject><subject>Copper base alloys</subject><subject>Copper |m Binary systems</subject><subject>Electrical conductivity</subject><subject>Nanoparticles</subject><subject>Nickel |m Binary systems</subject><subject>PARTICLES</subject><subject>PLATING</subject><subject>SINTERING</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNpFkL1OwzAcxC0EElXpwhN4REgBx3YcZ0RV-ZAqWGCOHPvv1ii1g-0IdeMdeEOehFZF5Za74Xc3HEKXJbkpCWtuNc-aEMrJ6gRNKKlIUVeMnx4zFedoltI72UmWQopmgmDh18pr2IDPOFg8REhpjFDYCIC74I3zK_zp8hrPRzyomJ3uIeFui_MasDLGZRf8vjoff76-nx1WfR-22CsfjvgFOrOqTzD78yl6u1-8zh-L5cvD0_xuWWgqeC5sLatKS8FEwwg10mjRSWVsV9eGi0Yq3jHLqOh0DYRobogBJgVvOgXKgmBTdHXYHWL4GCHlduOShr5XHsKY2rLiJaesrOkOvT6gOoaUIth2iG6j4rYtSbu_s_2_k_0Cs7RqQw</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Watanabe, Ryota</creator><creator>Ishizaki, Toshitaka</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140101</creationdate><title>Enhancement of pressure-free bonding with Cu particles by the addition of Cu–Ni alloy nanoparticles</title><author>Watanabe, Ryota ; Ishizaki, Toshitaka</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c264t-f7855c86369302d8dc6b8adfb77d4698a4b3f326bc7e00c4d0de38649baeafe63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Alloy plating</topic><topic>Alloying additive</topic><topic>Binary systems</topic><topic>BONDING</topic><topic>COPPER ALLOYS (40 TO 99.3 CU)</topic><topic>Copper base alloys</topic><topic>Copper |m Binary systems</topic><topic>Electrical conductivity</topic><topic>Nanoparticles</topic><topic>Nickel |m Binary systems</topic><topic>PARTICLES</topic><topic>PLATING</topic><topic>SINTERING</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Watanabe, Ryota</creatorcontrib><creatorcontrib>Ishizaki, Toshitaka</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Watanabe, Ryota</au><au>Ishizaki, Toshitaka</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of pressure-free bonding with Cu particles by the addition of Cu–Ni alloy nanoparticles</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2014-01-01</date><risdate>2014</risdate><volume>2</volume><issue>18</issue><spage>3542</spage><epage>3548</epage><pages>3542-3548</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>Cu-Ni alloy nanoparticles ( similar to 20 nm) were synthesized with precise control over the resulting Cu and Ni proportions. Nanoparticles composed of 29 wt% Cu and 71 wt% Ni exhibited significant resistance to surface oxidation and were readily sintered, suggesting that they could serve as bonding materials. The adhesive strength of Cu plates bonded by Cu particles of 150-200 nm in size was enhanced by adding these Cu-Ni alloy nanoparticles to the larger Cu particles. This is the first example of the use of base metal nanoparticles at a low-temperature (250 degree C) under pressure-free conditions to achieve bonding strengths equivalent to those obtained when applying the standard Pb-free solder (Sn-Ag-Cu). Furthermore, a sintered Cu film with good electric conductivity was obtained using the mixture of Cu-Ni nanoparticles and Cu particles. The enhanced properties of these bonded layers were due to the formation of a densely sintered layer resulting from the addition of the Cu-Ni alloy nanoparticles to the Cu paste. This method could potentially have applications in the electrical packaging industry, since it represents a simple, economical process that results in highly conductive bonds.</abstract><doi>10.1039/c4tc00240g</doi><tpages>7</tpages></addata></record> |
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source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
subjects | Alloy plating Alloying additive Binary systems BONDING COPPER ALLOYS (40 TO 99.3 CU) Copper base alloys Copper |m Binary systems Electrical conductivity Nanoparticles Nickel |m Binary systems PARTICLES PLATING SINTERING |
title | Enhancement of pressure-free bonding with Cu particles by the addition of Cu–Ni alloy nanoparticles |
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