Design of low-power CMOS VCO based on current-reused topology with center-tapped inductor bias
ABSTRACT This article presents a completely integrated 1.1 V 5.15 GHz CMOS voltage‐controlled oscillator (VCO) with self‐body‐biased technique to save the power consumption. MOS varactors are used to maintain a wide tuning range. The VCO was measured with a 1.1 V supply voltage and the tuning range...
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| Veröffentlicht in: | Microwave and optical technology letters 2014-07, Vol.56 (7), p.1587-1590 |
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| container_title | Microwave and optical technology letters |
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| creator | Hsu, Meng-Ting Chung, Cheng-Chuan Ou, An-Cheng |
| description | ABSTRACT
This article presents a completely integrated 1.1 V 5.15 GHz CMOS voltage‐controlled oscillator (VCO) with self‐body‐biased technique to save the power consumption. MOS varactors are used to maintain a wide tuning range. The VCO was measured with a 1.1 V supply voltage and the tuning range of 16% from 5.15 to 6.05 GHz. The measurement of phase noise is −114.63 dBc/Hz at 1 MHz offset from the carrier frequency of 5.15 GHz. The VCO core power dissipation is 0.8 mW. The figure‐of‐merit is −189.8 dBc/Hz. The VCO circuit was implemented by TSMC 0.18 μm CMOS process. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1587–1590, 2014 |
| doi_str_mv | 10.1002/mop.28401 |
| format | Article |
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This article presents a completely integrated 1.1 V 5.15 GHz CMOS voltage‐controlled oscillator (VCO) with self‐body‐biased technique to save the power consumption. MOS varactors are used to maintain a wide tuning range. The VCO was measured with a 1.1 V supply voltage and the tuning range of 16% from 5.15 to 6.05 GHz. The measurement of phase noise is −114.63 dBc/Hz at 1 MHz offset from the carrier frequency of 5.15 GHz. The VCO core power dissipation is 0.8 mW. The figure‐of‐merit is −189.8 dBc/Hz. The VCO circuit was implemented by TSMC 0.18 μm CMOS process. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1587–1590, 2014</description><identifier>ISSN: 0895-2477</identifier><identifier>EISSN: 1098-2760</identifier><identifier>DOI: 10.1002/mop.28401</identifier><identifier>CODEN: MOTLEO</identifier><language>eng</language><publisher>New York: Blackwell Publishing Ltd</publisher><subject>body biased ; Carrier frequencies ; Circuits ; CMOS ; current reused ; Electric potential ; low power ; Microwaves ; phase noise ; Tuning ; Voltage ; Voltage controlled oscillators ; voltage-controlled oscillator</subject><ispartof>Microwave and optical technology letters, 2014-07, Vol.56 (7), p.1587-1590</ispartof><rights>Copyright © 2014 Wiley Periodicals, Inc.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3681-9d400bae0c2ec6393045ab489624bc83cb466bc83865b4f01f7a28c56ce629213</citedby><cites>FETCH-LOGICAL-c3681-9d400bae0c2ec6393045ab489624bc83cb466bc83865b4f01f7a28c56ce629213</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fmop.28401$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fmop.28401$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Hsu, Meng-Ting</creatorcontrib><creatorcontrib>Chung, Cheng-Chuan</creatorcontrib><creatorcontrib>Ou, An-Cheng</creatorcontrib><title>Design of low-power CMOS VCO based on current-reused topology with center-tapped inductor bias</title><title>Microwave and optical technology letters</title><addtitle>Microw. Opt. Technol. Lett</addtitle><description>ABSTRACT
This article presents a completely integrated 1.1 V 5.15 GHz CMOS voltage‐controlled oscillator (VCO) with self‐body‐biased technique to save the power consumption. MOS varactors are used to maintain a wide tuning range. The VCO was measured with a 1.1 V supply voltage and the tuning range of 16% from 5.15 to 6.05 GHz. The measurement of phase noise is −114.63 dBc/Hz at 1 MHz offset from the carrier frequency of 5.15 GHz. The VCO core power dissipation is 0.8 mW. The figure‐of‐merit is −189.8 dBc/Hz. The VCO circuit was implemented by TSMC 0.18 μm CMOS process. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1587–1590, 2014</description><subject>body biased</subject><subject>Carrier frequencies</subject><subject>Circuits</subject><subject>CMOS</subject><subject>current reused</subject><subject>Electric potential</subject><subject>low power</subject><subject>Microwaves</subject><subject>phase noise</subject><subject>Tuning</subject><subject>Voltage</subject><subject>Voltage controlled oscillators</subject><subject>voltage-controlled oscillator</subject><issn>0895-2477</issn><issn>1098-2760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1kEtP3DAUhS1EJQbaBf_AUjewMFw_YjtLNKVTBMMgtTxWWI7HoaGZONiJpvPvyTDAAonVvbrnO0dXB6F9CkcUgB0vQnvEtAC6hUYUck2YkrCNRqDzjDCh1A7aTekRALhSbITuf_hUPTQ4lLgOS9KGpY94PJ39xjfjGS5s8nMcGuz6GH3Tkej79aULbajDwwovq-4vdoPiI-ls2w5a1cx714WIi8qmr-hLaevkv73OPXT98_TP-Be5mE3OxicXxHGpKcnnAqCwHhzzTvKcg8hsIXQumSic5q4QUq4XLbNClEBLZZl2mXRespxRvocONrltDE-9T51ZVMn5uraND30yNBNUUCpzOaDfP6CPoY_N8N1AUU1VBnwdeLihXAwpRV-aNlYLG1eGglk3bYamzUvTA3u8YZdV7Vefg2Y6u3pzkI2jSp3__-6w8Z-RiqvM3F5OzPkdm8qJlGbKnwH_NI1J</recordid><startdate>201407</startdate><enddate>201407</enddate><creator>Hsu, Meng-Ting</creator><creator>Chung, Cheng-Chuan</creator><creator>Ou, An-Cheng</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>201407</creationdate><title>Design of low-power CMOS VCO based on current-reused topology with center-tapped inductor bias</title><author>Hsu, Meng-Ting ; Chung, Cheng-Chuan ; Ou, An-Cheng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3681-9d400bae0c2ec6393045ab489624bc83cb466bc83865b4f01f7a28c56ce629213</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>body biased</topic><topic>Carrier frequencies</topic><topic>Circuits</topic><topic>CMOS</topic><topic>current reused</topic><topic>Electric potential</topic><topic>low power</topic><topic>Microwaves</topic><topic>phase noise</topic><topic>Tuning</topic><topic>Voltage</topic><topic>Voltage controlled oscillators</topic><topic>voltage-controlled oscillator</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Meng-Ting</creatorcontrib><creatorcontrib>Chung, Cheng-Chuan</creatorcontrib><creatorcontrib>Ou, An-Cheng</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microwave and optical technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsu, Meng-Ting</au><au>Chung, Cheng-Chuan</au><au>Ou, An-Cheng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of low-power CMOS VCO based on current-reused topology with center-tapped inductor bias</atitle><jtitle>Microwave and optical technology letters</jtitle><addtitle>Microw. Opt. Technol. Lett</addtitle><date>2014-07</date><risdate>2014</risdate><volume>56</volume><issue>7</issue><spage>1587</spage><epage>1590</epage><pages>1587-1590</pages><issn>0895-2477</issn><eissn>1098-2760</eissn><coden>MOTLEO</coden><abstract>ABSTRACT
This article presents a completely integrated 1.1 V 5.15 GHz CMOS voltage‐controlled oscillator (VCO) with self‐body‐biased technique to save the power consumption. MOS varactors are used to maintain a wide tuning range. The VCO was measured with a 1.1 V supply voltage and the tuning range of 16% from 5.15 to 6.05 GHz. The measurement of phase noise is −114.63 dBc/Hz at 1 MHz offset from the carrier frequency of 5.15 GHz. The VCO core power dissipation is 0.8 mW. The figure‐of‐merit is −189.8 dBc/Hz. The VCO circuit was implemented by TSMC 0.18 μm CMOS process. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1587–1590, 2014</abstract><cop>New York</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/mop.28401</doi><tpages>4</tpages></addata></record> |
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| subjects | body biased Carrier frequencies Circuits CMOS current reused Electric potential low power Microwaves phase noise Tuning Voltage Voltage controlled oscillators voltage-controlled oscillator |
| title | Design of low-power CMOS VCO based on current-reused topology with center-tapped inductor bias |
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