Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2 Nanosheet Transistor Channel

Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2 Nanosheet Transistor Channel

Two MoS2 field‐effect transistors are compared using graphene and Au/Ti source‐drain contacts in respects of their Ohmic and OFF behavior on an identical MoS2 nanosheet. As a result, graphene‐contact appears not only to show superior ohmic behavior to those of Au/Ti but also more enhanced OFF state...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2014-06, Vol.10 (12), p.2356-2361
Hauptverfasser: Lee, Young Tack, Choi, Kyunghee, Lee, Hee Sung, Min, Sung-Wook, Jeon, Pyo Jin, Hwang, Do Kyung, Choi, Hyoung Joon, Im, Seongil
Format: Artikel
Sprache:eng
Schlagworte:
FETs
graphene
MoS2
nanosheet
Nanotechnology
source/drain contact
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Zusammenfassung:Two MoS2 field‐effect transistors are compared using graphene and Au/Ti source‐drain contacts in respects of their Ohmic and OFF behavior on an identical MoS2 nanosheet. As a result, graphene‐contact appears not only to show superior ohmic behavior to those of Au/Ti but also more enhanced OFF state behavior. Such results are attributed to the electric‐field‐induced work function tuning of exfoliated graphene.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201303908