Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes

Polarization-reversed electron-blocking structure, which had negative polarization charges localized at the interface between the last quantum barrier (LQB) and electron-blocking layer (EBL), was demonstrated to remarkably improve the light-emitting efficiency of GaN-based blue light-emitting diodes...

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Veröffentlicht in:	Optics express 2014-05, Vol.22 Suppl 3 (S3), p.A1001-A1008
Hauptverfasser:	Ji, Xiaoli, Wei, Tongbo, Yang, Fuhua, Lu, Hongxi, Wei, Xuecheng, Ma, Ping, Yi, Xiaoyan, Wang, Junxi, Zeng, Yiping, Wang, Guohong, Li, Jinmin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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