Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes

Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes

Polarization-reversed electron-blocking structure, which had negative polarization charges localized at the interface between the last quantum barrier (LQB) and electron-blocking layer (EBL), was demonstrated to remarkably improve the light-emitting efficiency of GaN-based blue light-emitting diodes...

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Veröffentlicht in:Optics express 2014-05, Vol.22 Suppl 3 (S3), p.A1001-A1008
Hauptverfasser: Ji, Xiaoli, Wei, Tongbo, Yang, Fuhua, Lu, Hongxi, Wei, Xuecheng, Ma, Ping, Yi, Xiaoyan, Wang, Junxi, Zeng, Yiping, Wang, Guohong, Li, Jinmin
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container_end_page A1008
container_issue S3
container_start_page A1001
container_title Optics express
container_volume 22 Suppl 3
creator Ji, Xiaoli
Wei, Tongbo
Yang, Fuhua
Lu, Hongxi
Wei, Xuecheng
Ma, Ping
Yi, Xiaoyan
Wang, Junxi
Zeng, Yiping
Wang, Guohong
Li, Jinmin
description Polarization-reversed electron-blocking structure, which had negative polarization charges localized at the interface between the last quantum barrier (LQB) and electron-blocking layer (EBL), was demonstrated to remarkably improve the light-emitting efficiency of GaN-based blue light-emitting diodes (LEDs) numerically and experimentally. The improvement was attributed to the enhanced electron-blocking effectiveness by the elevated conduction band nearby the LQB/EBL interface. Nevertheless, the efficiency droop was not mitigated because the decrease of electron-leakage was accompanied by the increase of Auger recombination.
doi_str_mv 10.1364/OE.22.0A1001
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title Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes
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