Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

We discuss the influence of V-pits and their energy barrier, originating from its facets of (101¯1) planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin facets of V-pits of InGaN quantum wells (QWs) appear to be effective in im...

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Veröffentlicht in:	Optics express 2014-05, Vol.22 Suppl 3 (S3), p.A857-A866
Hauptverfasser:	Kim, Jaekyun, Cho, Yong-Hee, Ko, Dong-Su, Li, Xiang-Shu, Won, Jung-Yeon, Lee, Eunha, Park, Seoung-Hwan, Kim, Jun-Youn, Kim, Sungjin
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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