Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+δ Thin Films on NdGaO3 Substrates

Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+δ Thin Films on NdGaO3 Substrates

Thin films of double-perovskite structural LaBaCo2O5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structu...

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Veröffentlicht in:ACS applied materials & interfaces 2014-06, Vol.6 (11), p.8526-8530
Hauptverfasser: Liu, Ming, Zou, Qiang, Ma, Chunrui, Collins, Greg, Mi, Shao-Bo, Jia, Chun-Lin, Guo, Haiming, Gao, Hongjun, Chen, Chonglin
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container_end_page 8530
container_issue 11
container_start_page 8526
container_title ACS applied materials & interfaces
container_volume 6
creator Liu, Ming
Zou, Qiang
Ma, Chunrui
Collins, Greg
Mi, Shao-Bo
Jia, Chun-Lin
Guo, Haiming
Gao, Hongjun
Chen, Chonglin
description Thin films of double-perovskite structural LaBaCo2O5.5+δ were epitaxially grown on (110) NdGaO3 substrates by pulsed laser deposition. Microstructural studies by high-resolution X-ray diffraction and transmission electron microscopy revealed that the films have an excellent quality epitaxial structure. In addition, strong in-plane anisotropic strains were measured. Electrical transport properties of the films were characterized by an ultra-high-vacuum four-probe scanning tunneling microscopy system at different temperatures. It was found that the anisotropic in-plane strain can significantly tune the values of film resistance up to 590%.
doi_str_mv 10.1021/am502448k
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title Strain-Induced Anisotropic Transport Properties of LaBaCo2O5.5+δ Thin Films on NdGaO3 Substrates
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