Investigations on radiation hardness of DEPFET sensors for the Belle II detector
In the upgrade of the Belle detector at KEK (Tsukuba, Japan) the two innermost layers of the vertex detector will be realized by a pixel detector (PXD) consisting of DEPFET (DEpleted P-channel Field Effect Transistor) matrices. As the position of the detector will be very close to the beam pipe, it...
Gespeichert in:
| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2013-12, Vol.730, p.79-83 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 83 |
|---|---|
| container_issue | |
| container_start_page | 79 |
| container_title | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
| container_volume | 730 |
| creator | Ritter, Andreas Andricek, Ladislav Kleinohl, Tobias Koffmane, Christian Lütticke, Florian Marinas, Carlos Moser, Hans-Günther Ninkovic, Jelena Richter, Rainer Schaller, Gerhard Schnecke, Martina Schopper, Florian |
| description | In the upgrade of the Belle detector at KEK (Tsukuba, Japan) the two innermost layers of the vertex detector will be realized by a pixel detector (PXD) consisting of DEPFET (DEpleted P-channel Field Effect Transistor) matrices. As the position of the detector will be very close to the beam pipe, it will suffer from intense radiation levels. The main radiation background is the luminosity related 4-fermion final state radiation, which damages the silicon bulk material and the silicon dioxide from the gate contacts. With the dose expected at Belle II, the DEPFET suffers mainly from additional leakage current and increase in noise. In addition, defects in the silicon dioxide change transistor parameters, e.g. the threshold voltage. We will show results on the hardness factor of electrons after a 10MeV electron irradiation which was performed in the dose and energy range relevant for the PXD. In addition, we present X-ray irradiations of DEPFET equivalent test structures and compare radiation hardness for different oxide parameters in the prototype production. |
| doi_str_mv | 10.1016/j.nima.2013.04.069 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1531039845</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0168900213004956</els_id><sourcerecordid>1531039845</sourcerecordid><originalsourceid>FETCH-LOGICAL-c333t-87901bda223b1a15cd4f993210e3d7ba702e843f2f5d765678c8c9539ec6f9273</originalsourceid><addsrcrecordid>eNp9kE9LAzEQxYMoWKtfwFOOXnbNn91NAl60Vi0U7EHPIU0mNqXd1GQr-O1NrWfnMszw3jDvh9A1JTUltLtd133YmpoRymvS1KRTJ2hEpWCVakV3ikZFJCtFCDtHFzmvSSkl5AgtZv0X5CF8mCHEPuPY42Rc-J3wyiTXQy5bjx-ni6fpG87Q55gy9jHhYQX4ATYbwLMZdjCAHWK6RGfebDJc_fUxei--yUs1f32eTe7nleWcD5UUitClM4zxJTW0ta7xSnFGCXAnlkYQBrLhnvnWia7thLTSqpYrsJ1XTPAxujne3aX4uS8R9DZkW74xPcR91rTllHAlm7ZI2VFqU8w5gde7VGilb02JPuDTa33Apw_4NGl0wVdMd0cTlBBfAZLONkBvwYVUgmoXw3_2HyZud9Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1531039845</pqid></control><display><type>article</type><title>Investigations on radiation hardness of DEPFET sensors for the Belle II detector</title><source>Elsevier ScienceDirect Journals</source><creator>Ritter, Andreas ; Andricek, Ladislav ; Kleinohl, Tobias ; Koffmane, Christian ; Lütticke, Florian ; Marinas, Carlos ; Moser, Hans-Günther ; Ninkovic, Jelena ; Richter, Rainer ; Schaller, Gerhard ; Schnecke, Martina ; Schopper, Florian</creator><creatorcontrib>Ritter, Andreas ; Andricek, Ladislav ; Kleinohl, Tobias ; Koffmane, Christian ; Lütticke, Florian ; Marinas, Carlos ; Moser, Hans-Günther ; Ninkovic, Jelena ; Richter, Rainer ; Schaller, Gerhard ; Schnecke, Martina ; Schopper, Florian</creatorcontrib><description>In the upgrade of the Belle detector at KEK (Tsukuba, Japan) the two innermost layers of the vertex detector will be realized by a pixel detector (PXD) consisting of DEPFET (DEpleted P-channel Field Effect Transistor) matrices. As the position of the detector will be very close to the beam pipe, it will suffer from intense radiation levels. The main radiation background is the luminosity related 4-fermion final state radiation, which damages the silicon bulk material and the silicon dioxide from the gate contacts. With the dose expected at Belle II, the DEPFET suffers mainly from additional leakage current and increase in noise. In addition, defects in the silicon dioxide change transistor parameters, e.g. the threshold voltage. We will show results on the hardness factor of electrons after a 10MeV electron irradiation which was performed in the dose and energy range relevant for the PXD. In addition, we present X-ray irradiations of DEPFET equivalent test structures and compare radiation hardness for different oxide parameters in the prototype production.</description><identifier>ISSN: 0168-9002</identifier><identifier>EISSN: 1872-9576</identifier><identifier>DOI: 10.1016/j.nima.2013.04.069</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Beams (radiation) ; DEPFET ; Detectors ; Luminosity ; Particle tracking detectors ; Radiation damage ; Radiation hardness ; Semiconductor devices ; Silicon detector ; Silicon dioxide ; Spectrometers ; Threshold voltage</subject><ispartof>Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2013-12, Vol.730, p.79-83</ispartof><rights>2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-87901bda223b1a15cd4f993210e3d7ba702e843f2f5d765678c8c9539ec6f9273</citedby><cites>FETCH-LOGICAL-c333t-87901bda223b1a15cd4f993210e3d7ba702e843f2f5d765678c8c9539ec6f9273</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0168900213004956$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Ritter, Andreas</creatorcontrib><creatorcontrib>Andricek, Ladislav</creatorcontrib><creatorcontrib>Kleinohl, Tobias</creatorcontrib><creatorcontrib>Koffmane, Christian</creatorcontrib><creatorcontrib>Lütticke, Florian</creatorcontrib><creatorcontrib>Marinas, Carlos</creatorcontrib><creatorcontrib>Moser, Hans-Günther</creatorcontrib><creatorcontrib>Ninkovic, Jelena</creatorcontrib><creatorcontrib>Richter, Rainer</creatorcontrib><creatorcontrib>Schaller, Gerhard</creatorcontrib><creatorcontrib>Schnecke, Martina</creatorcontrib><creatorcontrib>Schopper, Florian</creatorcontrib><title>Investigations on radiation hardness of DEPFET sensors for the Belle II detector</title><title>Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment</title><description>In the upgrade of the Belle detector at KEK (Tsukuba, Japan) the two innermost layers of the vertex detector will be realized by a pixel detector (PXD) consisting of DEPFET (DEpleted P-channel Field Effect Transistor) matrices. As the position of the detector will be very close to the beam pipe, it will suffer from intense radiation levels. The main radiation background is the luminosity related 4-fermion final state radiation, which damages the silicon bulk material and the silicon dioxide from the gate contacts. With the dose expected at Belle II, the DEPFET suffers mainly from additional leakage current and increase in noise. In addition, defects in the silicon dioxide change transistor parameters, e.g. the threshold voltage. We will show results on the hardness factor of electrons after a 10MeV electron irradiation which was performed in the dose and energy range relevant for the PXD. In addition, we present X-ray irradiations of DEPFET equivalent test structures and compare radiation hardness for different oxide parameters in the prototype production.</description><subject>Beams (radiation)</subject><subject>DEPFET</subject><subject>Detectors</subject><subject>Luminosity</subject><subject>Particle tracking detectors</subject><subject>Radiation damage</subject><subject>Radiation hardness</subject><subject>Semiconductor devices</subject><subject>Silicon detector</subject><subject>Silicon dioxide</subject><subject>Spectrometers</subject><subject>Threshold voltage</subject><issn>0168-9002</issn><issn>1872-9576</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKtfwFOOXnbNn91NAl60Vi0U7EHPIU0mNqXd1GQr-O1NrWfnMszw3jDvh9A1JTUltLtd133YmpoRymvS1KRTJ2hEpWCVakV3ikZFJCtFCDtHFzmvSSkl5AgtZv0X5CF8mCHEPuPY42Rc-J3wyiTXQy5bjx-ni6fpG87Q55gy9jHhYQX4ATYbwLMZdjCAHWK6RGfebDJc_fUxei--yUs1f32eTe7nleWcD5UUitClM4zxJTW0ta7xSnFGCXAnlkYQBrLhnvnWia7thLTSqpYrsJ1XTPAxujne3aX4uS8R9DZkW74xPcR91rTllHAlm7ZI2VFqU8w5gde7VGilb02JPuDTa33Apw_4NGl0wVdMd0cTlBBfAZLONkBvwYVUgmoXw3_2HyZud9Q</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Ritter, Andreas</creator><creator>Andricek, Ladislav</creator><creator>Kleinohl, Tobias</creator><creator>Koffmane, Christian</creator><creator>Lütticke, Florian</creator><creator>Marinas, Carlos</creator><creator>Moser, Hans-Günther</creator><creator>Ninkovic, Jelena</creator><creator>Richter, Rainer</creator><creator>Schaller, Gerhard</creator><creator>Schnecke, Martina</creator><creator>Schopper, Florian</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20131201</creationdate><title>Investigations on radiation hardness of DEPFET sensors for the Belle II detector</title><author>Ritter, Andreas ; Andricek, Ladislav ; Kleinohl, Tobias ; Koffmane, Christian ; Lütticke, Florian ; Marinas, Carlos ; Moser, Hans-Günther ; Ninkovic, Jelena ; Richter, Rainer ; Schaller, Gerhard ; Schnecke, Martina ; Schopper, Florian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-87901bda223b1a15cd4f993210e3d7ba702e843f2f5d765678c8c9539ec6f9273</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Beams (radiation)</topic><topic>DEPFET</topic><topic>Detectors</topic><topic>Luminosity</topic><topic>Particle tracking detectors</topic><topic>Radiation damage</topic><topic>Radiation hardness</topic><topic>Semiconductor devices</topic><topic>Silicon detector</topic><topic>Silicon dioxide</topic><topic>Spectrometers</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ritter, Andreas</creatorcontrib><creatorcontrib>Andricek, Ladislav</creatorcontrib><creatorcontrib>Kleinohl, Tobias</creatorcontrib><creatorcontrib>Koffmane, Christian</creatorcontrib><creatorcontrib>Lütticke, Florian</creatorcontrib><creatorcontrib>Marinas, Carlos</creatorcontrib><creatorcontrib>Moser, Hans-Günther</creatorcontrib><creatorcontrib>Ninkovic, Jelena</creatorcontrib><creatorcontrib>Richter, Rainer</creatorcontrib><creatorcontrib>Schaller, Gerhard</creatorcontrib><creatorcontrib>Schnecke, Martina</creatorcontrib><creatorcontrib>Schopper, Florian</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ritter, Andreas</au><au>Andricek, Ladislav</au><au>Kleinohl, Tobias</au><au>Koffmane, Christian</au><au>Lütticke, Florian</au><au>Marinas, Carlos</au><au>Moser, Hans-Günther</au><au>Ninkovic, Jelena</au><au>Richter, Rainer</au><au>Schaller, Gerhard</au><au>Schnecke, Martina</au><au>Schopper, Florian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigations on radiation hardness of DEPFET sensors for the Belle II detector</atitle><jtitle>Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment</jtitle><date>2013-12-01</date><risdate>2013</risdate><volume>730</volume><spage>79</spage><epage>83</epage><pages>79-83</pages><issn>0168-9002</issn><eissn>1872-9576</eissn><abstract>In the upgrade of the Belle detector at KEK (Tsukuba, Japan) the two innermost layers of the vertex detector will be realized by a pixel detector (PXD) consisting of DEPFET (DEpleted P-channel Field Effect Transistor) matrices. As the position of the detector will be very close to the beam pipe, it will suffer from intense radiation levels. The main radiation background is the luminosity related 4-fermion final state radiation, which damages the silicon bulk material and the silicon dioxide from the gate contacts. With the dose expected at Belle II, the DEPFET suffers mainly from additional leakage current and increase in noise. In addition, defects in the silicon dioxide change transistor parameters, e.g. the threshold voltage. We will show results on the hardness factor of electrons after a 10MeV electron irradiation which was performed in the dose and energy range relevant for the PXD. In addition, we present X-ray irradiations of DEPFET equivalent test structures and compare radiation hardness for different oxide parameters in the prototype production.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.nima.2013.04.069</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0168-9002 |
| ispartof | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2013-12, Vol.730, p.79-83 |
| issn | 0168-9002 1872-9576 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1531039845 |
| source | Elsevier ScienceDirect Journals |
| subjects | Beams (radiation) DEPFET Detectors Luminosity Particle tracking detectors Radiation damage Radiation hardness Semiconductor devices Silicon detector Silicon dioxide Spectrometers Threshold voltage |
| title | Investigations on radiation hardness of DEPFET sensors for the Belle II detector |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T08%3A13%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigations%20on%20radiation%20hardness%20of%20DEPFET%20sensors%20for%20the%20Belle%20II%20detector&rft.jtitle=Nuclear%20instruments%20&%20methods%20in%20physics%20research.%20Section%20A,%20Accelerators,%20spectrometers,%20detectors%20and%20associated%20equipment&rft.au=Ritter,%20Andreas&rft.date=2013-12-01&rft.volume=730&rft.spage=79&rft.epage=83&rft.pages=79-83&rft.issn=0168-9002&rft.eissn=1872-9576&rft_id=info:doi/10.1016/j.nima.2013.04.069&rft_dat=%3Cproquest_cross%3E1531039845%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1531039845&rft_id=info:pmid/&rft_els_id=S0168900213004956&rfr_iscdi=true |