Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling

•Al2O3 interlayer with plasma post-nitridation can reduce Dit of HfO2/Al2O3/SiGe.•Dit toward valance band is decreased by this method, compared with HfO2/SiGe MOS.•There is an universal relationship between the Dit and ΔEOT by post-nitridation.•0.28-nm Al2O3 with 150-W microwave plasma achieves Dit∼...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Microelectronic engineering 2013-09, Vol.109, p.266-269
Hauptverfasser:	Han, J.-H., Zhang, R., Osada, T., Hata, M., Takenaka, M., Takagi, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Capacitance–voltage characteristics Conductance method Gates Hafnium oxide HfO2/Al2O3 Interfacial properties Microwaves MOS interface Nitrogen plasma Plasma post-nitridation Silicon germanides Silicon–germanium Stacks
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!