Synthesis of SiGe layered structure in single crystalline Ge substrate by low energy Si ion implantation

Nanometer-thickness SiGe alloy layers were synthesized by direct Si ion implantation in Ge (100) wafers at different fluences followed by high temperature annealing. The cross-sectional transmission electron microscopy and secondary ion mass spectrometry reveal the formation of a thin Si-rich crysta...

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Veröffentlicht in:	Vacuum 2014-03, Vol.101, p.387-393
Hauptverfasser:	Mollick, S.A., Ghose, D., Bhattacharyya, S.R., Bhunia, S., Ray, N.R., Ranjan, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Crystal structure Germanium Ion implantation Low energy Raman spectroscopy Secondary ion mass spectrometry SiGe Silicon germanides Silicon substrates TEM
Online-Zugang:	Volltext
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