Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region
By superposing a chopped below‐gap excitation (BGE) light on a cw above‐gap excitation and observing the intensity change of photoluminescence (PL) due to the BGE, we clarified a distribution of nonradiative recombination (NRR) centers in AlGaN multi‐quantum well (MQW) structures for the wavelength...
Gespeichert in:
| Veröffentlicht in: | Physica status solidi. C 2014-02, Vol.11 (3-4), p.832-835 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 835 |
|---|---|
| container_issue | 3-4 |
| container_start_page | 832 |
| container_title | Physica status solidi. C |
| container_volume | 11 |
| creator | Touhidul Islam, A. Z. M. Murakoshi, N. Fukuda, T. Hirayama, H. Kamata, N. |
| description | By superposing a chopped below‐gap excitation (BGE) light on a cw above‐gap excitation and observing the intensity change of photoluminescence (PL) due to the BGE, we clarified a distribution of nonradiative recombination (NRR) centers in AlGaN multi‐quantum well (MQW) structures for the wavelength region of deep ultraviolet (UV). The decrease in band‐edge PL peak intensity at 10 K exemplified the presence of a pair of NRR centers in AlGaN well layers whose transition energy corresponds to that of the BGE. The BGE power dependence of the normalized PL intensity showed a quenching saturation due to trap‐filling effect of electrons in one of the centers which were activated by the BGE. The BGE energy dependence of the normalized PL intensity revealed that the optical activation energy of the dominant NRR process via these trap states in the AlGaN MQW is around 1.17 eV. The purely optical scheme of detection enables us to obtain clues for identifying defect levels in DUV region and eliminating them during growth process without any preparation of electrodes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.201300405 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1531017145</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3268541241</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4545-e44616def477f1e0aa8d42e4eb2416af7513ff00d9d896012909f5e73fdf5fb23</originalsourceid><addsrcrecordid>eNqFkE1v1DAQhiNEJUrLlbMlLlyynYk_khyrBZZK1ZZSWiQuljcZI5esndoJpf8eL4sqxKWnGWme59XoLYrXCAsEqE7GlLpFBcgBBMhnxSEqhBKVqJ7nvVFVqbjEF8XLlG4BuARUh4W5GCfXmYH1NFE3ueBZsMwHH03vzOR-EovUhe3GefPn2pGfKCbmPDsdVmbN7mbjp3nL7mkYErMh5iga2fVNFr9n47g4sGZI9OrvPCquP7z_svxYnl-szpan52UnpJAlCaFQ9WRFXVskMKbpRUWCNpVAZWwtkVsL0Ld90yrAqoXWSqq57a20m4ofFW_3uWMMdzOlSW9d6vJTxlOYk0bJEbBGITP65j_0NszR5-8yhZxzwZsdtdhTXQwpRbJ6jG5r4oNG0LvG9a5x_dh4Ftq9cO8GeniC1p-urpb_uuXedWmiX4-uiT-0qnkt9df1Sn--uWybb_KdXvPfFniUVg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1513334385</pqid></control><display><type>article</type><title>Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Touhidul Islam, A. Z. M. ; Murakoshi, N. ; Fukuda, T. ; Hirayama, H. ; Kamata, N.</creator><creatorcontrib>Touhidul Islam, A. Z. M. ; Murakoshi, N. ; Fukuda, T. ; Hirayama, H. ; Kamata, N.</creatorcontrib><description>By superposing a chopped below‐gap excitation (BGE) light on a cw above‐gap excitation and observing the intensity change of photoluminescence (PL) due to the BGE, we clarified a distribution of nonradiative recombination (NRR) centers in AlGaN multi‐quantum well (MQW) structures for the wavelength region of deep ultraviolet (UV). The decrease in band‐edge PL peak intensity at 10 K exemplified the presence of a pair of NRR centers in AlGaN well layers whose transition energy corresponds to that of the BGE. The BGE power dependence of the normalized PL intensity showed a quenching saturation due to trap‐filling effect of electrons in one of the centers which were activated by the BGE. The BGE energy dependence of the normalized PL intensity revealed that the optical activation energy of the dominant NRR process via these trap states in the AlGaN MQW is around 1.17 eV. The purely optical scheme of detection enables us to obtain clues for identifying defect levels in DUV region and eliminating them during growth process without any preparation of electrodes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201300405</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>AlGaN quantum wells ; Aluminum gallium nitrides ; Electrodes ; Excitation ; nonradiative recombination center ; photoluminescence ; Quantum wells ; Quenching ; Saturation ; Solid state physics ; two-wavelength excitation ; Wavelengths</subject><ispartof>Physica status solidi. C, 2014-02, Vol.11 (3-4), p.832-835</ispartof><rights>Copyright © 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4545-e44616def477f1e0aa8d42e4eb2416af7513ff00d9d896012909f5e73fdf5fb23</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.201300405$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.201300405$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,778,782,1414,27907,27908,45557,45558</link.rule.ids></links><search><creatorcontrib>Touhidul Islam, A. Z. M.</creatorcontrib><creatorcontrib>Murakoshi, N.</creatorcontrib><creatorcontrib>Fukuda, T.</creatorcontrib><creatorcontrib>Hirayama, H.</creatorcontrib><creatorcontrib>Kamata, N.</creatorcontrib><title>Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi C</addtitle><description>By superposing a chopped below‐gap excitation (BGE) light on a cw above‐gap excitation and observing the intensity change of photoluminescence (PL) due to the BGE, we clarified a distribution of nonradiative recombination (NRR) centers in AlGaN multi‐quantum well (MQW) structures for the wavelength region of deep ultraviolet (UV). The decrease in band‐edge PL peak intensity at 10 K exemplified the presence of a pair of NRR centers in AlGaN well layers whose transition energy corresponds to that of the BGE. The BGE power dependence of the normalized PL intensity showed a quenching saturation due to trap‐filling effect of electrons in one of the centers which were activated by the BGE. The BGE energy dependence of the normalized PL intensity revealed that the optical activation energy of the dominant NRR process via these trap states in the AlGaN MQW is around 1.17 eV. The purely optical scheme of detection enables us to obtain clues for identifying defect levels in DUV region and eliminating them during growth process without any preparation of electrodes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>AlGaN quantum wells</subject><subject>Aluminum gallium nitrides</subject><subject>Electrodes</subject><subject>Excitation</subject><subject>nonradiative recombination center</subject><subject>photoluminescence</subject><subject>Quantum wells</subject><subject>Quenching</subject><subject>Saturation</subject><subject>Solid state physics</subject><subject>two-wavelength excitation</subject><subject>Wavelengths</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkE1v1DAQhiNEJUrLlbMlLlyynYk_khyrBZZK1ZZSWiQuljcZI5esndoJpf8eL4sqxKWnGWme59XoLYrXCAsEqE7GlLpFBcgBBMhnxSEqhBKVqJ7nvVFVqbjEF8XLlG4BuARUh4W5GCfXmYH1NFE3ueBZsMwHH03vzOR-EovUhe3GefPn2pGfKCbmPDsdVmbN7mbjp3nL7mkYErMh5iga2fVNFr9n47g4sGZI9OrvPCquP7z_svxYnl-szpan52UnpJAlCaFQ9WRFXVskMKbpRUWCNpVAZWwtkVsL0Ld90yrAqoXWSqq57a20m4ofFW_3uWMMdzOlSW9d6vJTxlOYk0bJEbBGITP65j_0NszR5-8yhZxzwZsdtdhTXQwpRbJ6jG5r4oNG0LvG9a5x_dh4Ftq9cO8GeniC1p-urpb_uuXedWmiX4-uiT-0qnkt9df1Sn--uWybb_KdXvPfFniUVg</recordid><startdate>20140201</startdate><enddate>20140201</enddate><creator>Touhidul Islam, A. Z. M.</creator><creator>Murakoshi, N.</creator><creator>Fukuda, T.</creator><creator>Hirayama, H.</creator><creator>Kamata, N.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7QF</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>20140201</creationdate><title>Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region</title><author>Touhidul Islam, A. Z. M. ; Murakoshi, N. ; Fukuda, T. ; Hirayama, H. ; Kamata, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4545-e44616def477f1e0aa8d42e4eb2416af7513ff00d9d896012909f5e73fdf5fb23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>AlGaN quantum wells</topic><topic>Aluminum gallium nitrides</topic><topic>Electrodes</topic><topic>Excitation</topic><topic>nonradiative recombination center</topic><topic>photoluminescence</topic><topic>Quantum wells</topic><topic>Quenching</topic><topic>Saturation</topic><topic>Solid state physics</topic><topic>two-wavelength excitation</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Touhidul Islam, A. Z. M.</creatorcontrib><creatorcontrib>Murakoshi, N.</creatorcontrib><creatorcontrib>Fukuda, T.</creatorcontrib><creatorcontrib>Hirayama, H.</creatorcontrib><creatorcontrib>Kamata, N.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Touhidul Islam, A. Z. M.</au><au>Murakoshi, N.</au><au>Fukuda, T.</au><au>Hirayama, H.</au><au>Kamata, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi C</addtitle><date>2014-02-01</date><risdate>2014</risdate><volume>11</volume><issue>3-4</issue><spage>832</spage><epage>835</epage><pages>832-835</pages><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>By superposing a chopped below‐gap excitation (BGE) light on a cw above‐gap excitation and observing the intensity change of photoluminescence (PL) due to the BGE, we clarified a distribution of nonradiative recombination (NRR) centers in AlGaN multi‐quantum well (MQW) structures for the wavelength region of deep ultraviolet (UV). The decrease in band‐edge PL peak intensity at 10 K exemplified the presence of a pair of NRR centers in AlGaN well layers whose transition energy corresponds to that of the BGE. The BGE power dependence of the normalized PL intensity showed a quenching saturation due to trap‐filling effect of electrons in one of the centers which were activated by the BGE. The BGE energy dependence of the normalized PL intensity revealed that the optical activation energy of the dominant NRR process via these trap states in the AlGaN MQW is around 1.17 eV. The purely optical scheme of detection enables us to obtain clues for identifying defect levels in DUV region and eliminating them during growth process without any preparation of electrodes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.201300405</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1862-6351 |
| ispartof | Physica status solidi. C, 2014-02, Vol.11 (3-4), p.832-835 |
| issn | 1862-6351 1610-1642 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1531017145 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | AlGaN quantum wells Aluminum gallium nitrides Electrodes Excitation nonradiative recombination center photoluminescence Quantum wells Quenching Saturation Solid state physics two-wavelength excitation Wavelengths |
| title | Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T11%3A55%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optical%20detection%20of%20nonradiative%20recombination%20centers%20in%20AlGaN%20quantum%20wells%20for%20deep%20UV%20region&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Touhidul%20Islam,%20A.%20Z.%20M.&rft.date=2014-02-01&rft.volume=11&rft.issue=3-4&rft.spage=832&rft.epage=835&rft.pages=832-835&rft.issn=1862-6351&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.201300405&rft_dat=%3Cproquest_cross%3E3268541241%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1513334385&rft_id=info:pmid/&rfr_iscdi=true |