GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures
We present LED structures with embedded semipolar {101¯1} quantum wells based on 2-inch c-plane GaN templates grown on c-plane sapphire substrates. Using selective area epitaxy, we achieved periodic GaN stripe structures with triangular cross-section with dimensions of a few 100nm on continuous area...
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| Veröffentlicht in: | Journal of crystal growth 2013-05, Vol.370, p.101-104 |
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| container_title | Journal of crystal growth |
| container_volume | 370 |
| creator | Leute, R.A.R. Heinz, D. Wang, J. Lipski, F. Meisch, T. Thonke, K. Thalmair, J. Zweck, J. Scholz, F. |
| description | We present LED structures with embedded semipolar {101¯1} quantum wells based on 2-inch c-plane GaN templates grown on c-plane sapphire substrates. Using selective area epitaxy, we achieved periodic GaN stripe structures with triangular cross-section with dimensions of a few 100nm on continuous areas of several cm2. These structures exhibit semipolar side facets on which GaInN quantum wells with reduced piezoelectric fields have been deposited. The small dimensions of these structures allow complete embedding by GaN cladding layers eventually resulting in a flat c-plane surface. Consequently, our approach allows conventional device processing to be applied. Structural, optical, and electrical characterization is presented and the influence of mask material and pattern on the performances of LED structures is investigated.
► We present sub-μm scale patterning of GaN templates. ► We achieve selective epitaxy of sub-μm sized three-dimensional GaN with semipolar quantum wells on several cm2. ► We present working LEDs with 3D GaN based semipolar QWs and polarized light emission planarized to produce a smooth surface. |
| doi_str_mv | 10.1016/j.jcrysgro.2012.09.060 |
| format | Article |
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► We present sub-μm scale patterning of GaN templates. ► We achieve selective epitaxy of sub-μm sized three-dimensional GaN with semipolar quantum wells on several cm2. ► We present working LEDs with 3D GaN based semipolar QWs and polarized light emission planarized to produce a smooth surface.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2012.09.060</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Selective epitaxy ; A3. Semipolar quantum wells ; Applied sciences ; B1. Nitrides ; B3. Light emitting diodes ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross sections ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Deposition ; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials ; Dielectrics, piezoelectrics, and ferroelectrics and their properties ; Electrical properties ; Electronics ; Exact sciences and technology ; Gallium nitrides ; Materials science ; Nanoscale materials and structures: fabrication and characterization ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Optoelectronic devices ; Other topics in nanoscale materials and structures ; Physics ; Piezoelectricity ; Quantum wells ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Three dimensional</subject><ispartof>Journal of crystal growth, 2013-05, Vol.370, p.101-104</ispartof><rights>2012 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-11e94b3551cc8559e61aed2f5e64d7dcd951eb3708e997aba08736465632babf3</citedby><cites>FETCH-LOGICAL-c408t-11e94b3551cc8559e61aed2f5e64d7dcd951eb3708e997aba08736465632babf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024812008536$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27398565$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Leute, R.A.R.</creatorcontrib><creatorcontrib>Heinz, D.</creatorcontrib><creatorcontrib>Wang, J.</creatorcontrib><creatorcontrib>Lipski, F.</creatorcontrib><creatorcontrib>Meisch, T.</creatorcontrib><creatorcontrib>Thonke, K.</creatorcontrib><creatorcontrib>Thalmair, J.</creatorcontrib><creatorcontrib>Zweck, J.</creatorcontrib><creatorcontrib>Scholz, F.</creatorcontrib><title>GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures</title><title>Journal of crystal growth</title><description>We present LED structures with embedded semipolar {101¯1} quantum wells based on 2-inch c-plane GaN templates grown on c-plane sapphire substrates. Using selective area epitaxy, we achieved periodic GaN stripe structures with triangular cross-section with dimensions of a few 100nm on continuous areas of several cm2. These structures exhibit semipolar side facets on which GaInN quantum wells with reduced piezoelectric fields have been deposited. The small dimensions of these structures allow complete embedding by GaN cladding layers eventually resulting in a flat c-plane surface. Consequently, our approach allows conventional device processing to be applied. Structural, optical, and electrical characterization is presented and the influence of mask material and pattern on the performances of LED structures is investigated.
► We present sub-μm scale patterning of GaN templates. ► We achieve selective epitaxy of sub-μm sized three-dimensional GaN with semipolar quantum wells on several cm2. ► We present working LEDs with 3D GaN based semipolar QWs and polarized light emission planarized to produce a smooth surface.</description><subject>A3. Selective epitaxy</subject><subject>A3. Semipolar quantum wells</subject><subject>Applied sciences</subject><subject>B1. Nitrides</subject><subject>B3. Light emitting diodes</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross sections</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Deposition</subject><subject>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</subject><subject>Dielectrics, piezoelectrics, and ferroelectrics and their properties</subject><subject>Electrical properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>Materials science</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Optoelectronic devices</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Piezoelectricity</subject><subject>Quantum wells</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Three dimensional</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkU9P3DAQxS1UJLbAV0C-VOolYRzHTnJrBRQqrYqQqHq0HHtCvcqfrScBLZ--Xi3tlYttjX7PM_MeYxcCcgFCX27yjYs7eopTXoAocmhy0HDEVqKuZKYAig9slc4ig6KsT9hHog1AUgpYsXBrf_DWEnq-vrkm_hLm35xwCNupt5E__CKOw7afdmF8Sq8WvU8oLW02BBenAWeMnMLrvog9ujk8Y7_jaZiXkctrTnNc3LxEpDN23Nme8PztPmU_v908Xt1l6_vb71df15kroZ4zIbApW6mUcK5WqkEtLPqiU6hLX3nnGyWwlRXU2DSVbS2kLXWplZZFa9tOnrLPh3-3cfqzIM1mCOSw7-2I00JGKJlskwrq99FSl2kQKfeoPqBpaaKIndnGMNi4MwLMPgazMf9iMPsYDDQmxZCEn956WHK276IdXaD_6qKSTa20StyXA4fJm-eA0ZALODr0ISZbjZ_Ce63-AoEgogs</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Leute, R.A.R.</creator><creator>Heinz, D.</creator><creator>Wang, J.</creator><creator>Lipski, F.</creator><creator>Meisch, T.</creator><creator>Thonke, K.</creator><creator>Thalmair, J.</creator><creator>Zweck, J.</creator><creator>Scholz, F.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130501</creationdate><title>GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures</title><author>Leute, R.A.R. ; Heinz, D. ; Wang, J. ; Lipski, F. ; Meisch, T. ; Thonke, K. ; Thalmair, J. ; Zweck, J. ; Scholz, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c408t-11e94b3551cc8559e61aed2f5e64d7dcd951eb3708e997aba08736465632babf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>A3. Selective epitaxy</topic><topic>A3. Semipolar quantum wells</topic><topic>Applied sciences</topic><topic>B1. Nitrides</topic><topic>B3. Light emitting diodes</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross sections</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Deposition</topic><topic>Dielectric, piezoelectric, ferroelectric and antiferroelectric materials</topic><topic>Dielectrics, piezoelectrics, and ferroelectrics and their properties</topic><topic>Electrical properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium nitrides</topic><topic>Materials science</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Optoelectronic devices</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Physics</topic><topic>Piezoelectricity</topic><topic>Quantum wells</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Three dimensional</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Leute, R.A.R.</creatorcontrib><creatorcontrib>Heinz, D.</creatorcontrib><creatorcontrib>Wang, J.</creatorcontrib><creatorcontrib>Lipski, F.</creatorcontrib><creatorcontrib>Meisch, T.</creatorcontrib><creatorcontrib>Thonke, K.</creatorcontrib><creatorcontrib>Thalmair, J.</creatorcontrib><creatorcontrib>Zweck, J.</creatorcontrib><creatorcontrib>Scholz, F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Leute, R.A.R.</au><au>Heinz, D.</au><au>Wang, J.</au><au>Lipski, F.</au><au>Meisch, T.</au><au>Thonke, K.</au><au>Thalmair, J.</au><au>Zweck, J.</au><au>Scholz, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures</atitle><jtitle>Journal of crystal growth</jtitle><date>2013-05-01</date><risdate>2013</risdate><volume>370</volume><spage>101</spage><epage>104</epage><pages>101-104</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>We present LED structures with embedded semipolar {101¯1} quantum wells based on 2-inch c-plane GaN templates grown on c-plane sapphire substrates. Using selective area epitaxy, we achieved periodic GaN stripe structures with triangular cross-section with dimensions of a few 100nm on continuous areas of several cm2. These structures exhibit semipolar side facets on which GaInN quantum wells with reduced piezoelectric fields have been deposited. The small dimensions of these structures allow complete embedding by GaN cladding layers eventually resulting in a flat c-plane surface. Consequently, our approach allows conventional device processing to be applied. Structural, optical, and electrical characterization is presented and the influence of mask material and pattern on the performances of LED structures is investigated.
► We present sub-μm scale patterning of GaN templates. ► We achieve selective epitaxy of sub-μm sized three-dimensional GaN with semipolar quantum wells on several cm2. ► We present working LEDs with 3D GaN based semipolar QWs and polarized light emission planarized to produce a smooth surface.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2012.09.060</doi><tpages>4</tpages></addata></record> |
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| subjects | A3. Selective epitaxy A3. Semipolar quantum wells Applied sciences B1. Nitrides B3. Light emitting diodes Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross sections Cross-disciplinary physics: materials science rheology Crystal growth Deposition Dielectric, piezoelectric, ferroelectric and antiferroelectric materials Dielectrics, piezoelectrics, and ferroelectrics and their properties Electrical properties Electronics Exact sciences and technology Gallium nitrides Materials science Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Optoelectronic devices Other topics in nanoscale materials and structures Physics Piezoelectricity Quantum wells Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Three dimensional |
| title | GaN based LEDs with semipolar QWs employing embedded sub-micrometer sized selectively grown 3D structures |
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