Characterization of undoped and Si-doped bulk GaN fabricated by hydride vapor phase epitaxy

In this study, the optical, structural, electrical and thermoelectric properties of undoped and Si‐doped bulk GaN samples are investigated. The room temperature PL near band emission peaks of undoped and Si‐doped bulk GaN samples are 3.414 eV and 3.402 eV. The undoped and Si‐doped bulk GaN samples’...

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Veröffentlicht in:	Physica status solidi. C 2014-02, Vol.11 (3-4), p.573-576
Hauptverfasser:	Wang, Baozhu, Yu, Pingping, Kucukgok, Bahadir, Melton, Andrew G., Lu, Na, Ferguson, Ian T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Band spectra Bulk density bulk GaN Bulk sampling Carrier density Emission Gallium nitrides optical properties Si-doped Spectra Spectral emissivity
Online-Zugang:	Volltext
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