Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD

A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of GaN films on ordinary soda-lime glass substrates with Ni as intermediate layer. With this method, high c-orientated crysta...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of alloys and compounds 2014, Vol.583, p.39-42
Hauptverfasser:	Zhong, M.M., Qin, F.W., Liu, Y.M., Wang, C., Bian, J.M., Wang, E.P., Wang, H., Zhang, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Crystal structure Electron cyclotron resonance Exact sciences and technology Gallium nitride (GaN) Gallium nitrides Glass Glass substrate Illumination Lighting Low temperature growth Materials science Methods of deposition of films and coatings film growth and epitaxy Nickel Physics Plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD)
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!