Generalized lucky-drift model for impact ionization in semiconductors with disorder

An extension of an original lucky-drift model to the case of disordered semiconductors is proposed, motivated by experimental observations of an avalanche phenomenon in amorphous semiconductors. The generalization encompasses two scattering mechanisms: an inelastic one due to optical phonons and an...

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Veröffentlicht in:	Journal of physics. Condensed matter 2011-02, Vol.23 (5), p.055802-7
Hauptverfasser:	Rubel, O, Potvin, A, Laughton, D
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Disorders Elastic scattering Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Field emission, ionization, evaporation, and desorption Inelastic scattering Mathematical analysis Mathematical models Physics Semiconductors
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