Generalized lucky-drift model for impact ionization in semiconductors with disorder
An extension of an original lucky-drift model to the case of disordered semiconductors is proposed, motivated by experimental observations of an avalanche phenomenon in amorphous semiconductors. The generalization encompasses two scattering mechanisms: an inelastic one due to optical phonons and an...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2011-02, Vol.23 (5), p.055802-7 |
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| container_title | Journal of physics. Condensed matter |
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| creator | Rubel, O Potvin, A Laughton, D |
| description | An extension of an original lucky-drift model to the case of disordered semiconductors is proposed, motivated by experimental observations of an avalanche phenomenon in amorphous semiconductors. The generalization encompasses two scattering mechanisms: an inelastic one due to optical phonons and an elastic one due to a disorder potential. An obtained analytical solution is verified by a kinetic Monte Carlo simulation. Eventually, experimental data on a field dependence of the impact ionization coefficient in amorphous selenium are interpreted using reasonable material parameters. |
| doi_str_mv | 10.1088/0953-8984/23/5/055802 |
| format | Article |
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The generalization encompasses two scattering mechanisms: an inelastic one due to optical phonons and an elastic one due to a disorder potential. An obtained analytical solution is verified by a kinetic Monte Carlo simulation. 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Eventually, experimental data on a field dependence of the impact ionization coefficient in amorphous selenium are interpreted using reasonable material parameters.</description><subject>Computer simulation</subject><subject>Condensed matter</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Disorders</subject><subject>Elastic scattering</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Exact sciences and technology</subject><subject>Field emission, ionization, evaporation, and desorption</subject><subject>Inelastic scattering</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Physics</subject><subject>Semiconductors</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqN0MtKxDAUgOEgio6XR1CyEV1YJ2kuTZci3kBwoYK7kMkFo21TkxbRpzfDjLpQxNXZfCeH_ADsYnSMkRBTVDNSiFrQaUmmbIoYE6hcARNMOC44FQ-rYPJlNsBmSk8IISoIXQcbJaaI15hNwO2F7WxUjX-3Bjajfn4rTPRugG0wtoEuROjbXukB-tD5dzXkAX0Hk229Dp0Z9RBigq9-eITGpxCNjdtgzakm2Z3l3AL352d3p5fF9c3F1enJdaEprYei4tWMI0SIc4QK6nRNECMVrZwqlah5pSjTxBAjuFOzGcdVxYlxtHacG2pKsgUOFu_2MbyMNg2y9UnbplGdDWOSglVUYMFFlod_SszK3CpznilbUB1DStE62UffqvgmMZLz8nJeVc6rypJIJhfl897e8sQ4a6352vpMncH-EqikVeOi6rRP346IMn-6zg4tnA_9v28f_Vz5lcreOPIBRUunXw</recordid><startdate>20110209</startdate><enddate>20110209</enddate><creator>Rubel, O</creator><creator>Potvin, A</creator><creator>Laughton, D</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>IQODW</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20110209</creationdate><title>Generalized lucky-drift model for impact ionization in semiconductors with disorder</title><author>Rubel, O ; Potvin, A ; Laughton, D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c449t-767b60033ff3484fc93053747fa2a8967a45c3d3d86fabb617763df49f66d4d23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Computer simulation</topic><topic>Condensed matter</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Disorders</topic><topic>Elastic scattering</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Exact sciences and technology</topic><topic>Field emission, ionization, evaporation, and desorption</topic><topic>Inelastic scattering</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Physics</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rubel, O</creatorcontrib><creatorcontrib>Potvin, A</creatorcontrib><creatorcontrib>Laughton, D</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Journal of physics. 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| ispartof | Journal of physics. Condensed matter, 2011-02, Vol.23 (5), p.055802-7 |
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| language | eng |
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| source | Institute of Physics Journals |
| subjects | Computer simulation Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Disorders Elastic scattering Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Field emission, ionization, evaporation, and desorption Inelastic scattering Mathematical analysis Mathematical models Physics Semiconductors |
| title | Generalized lucky-drift model for impact ionization in semiconductors with disorder |
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