Topological-Insulator Passively Q-Switched Double-Clad Fiber Laser at 2 $\mu$ m Wavelength
In this paper, Topological insulator (TI) Bi 2 Se 3 as a saturable absorber (SA) is exploited to Q-switch fiber lasers at 2 mu m wavelength for the first time. Few-layer TI:Bi 2 Se 3 nanosheets in CS-HAc solution are prepared by the liquid-phase exfoliation method, and the thin 2-D structure with th...
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Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2014-09, Vol.20 (5), p.1-8 |
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description | In this paper, Topological insulator (TI) Bi 2 Se 3 as a saturable absorber (SA) is exploited to Q-switch fiber lasers at 2 mu m wavelength for the first time. Few-layer TI:Bi 2 Se 3 nanosheets in CS-HAc solution are prepared by the liquid-phase exfoliation method, and the thin 2-D structure with the thickness of 3-5 layers is well characterized. The open-aperture Z-scan experiment shows that the few-layer TI:Bi 2 Se 3 has the saturable optical intensity of 41 MW/cm 2 at 800 nm and the modulation depth of 3.7%. The optical deposition technique is used to efficiently assemble the TI:Bi 2 Se 3 nanosheets in the solution onto a fiber ferrule, therefore constructing a fiber-compatible TI-based SA (FC-TISA). By further inserting the FC-TISA into a diode-pumped Tm 3 + -doped double-clad fiber laser (TM-DCFL), stable Q-switching operation at 1.98 mu m is successfully achieved with the shortest pulse width of 4.18 mu s and the tunable repetition rate from 8.4 to 26.8 kHz. In particular, the TM-DCFL can deliver large-energy Q-switched pulses with the pulse energy as high as 313 nJ (corresponding to average output power of 8.4 mW). Our results suggest that TI-based SA is suitable for pulsed laser operation in the eye-safe region of 2 mu m, and potentially develops as an ultra-broadband photonics device. |
doi_str_mv | 10.1109/JSTQE.2014.2305834 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1520934058</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1520934058</sourcerecordid><originalsourceid>FETCH-LOGICAL-c346t-26395e11a33a46724ee02e0ca8116c2370c8524de5ac316d1e0c559e58701e603</originalsourceid><addsrcrecordid>eNot0EtPAjEQAODGaCKif8BTDxy8LE5f-zgaBMWQKAGjMSZN6Q6wpktxu6vh37sIl5lJ5pHJR8g1gz5jkN0-zebTYZ8Dk30uQKVCnpAOUyqNpJL8tK0hSSIew_s5uQjhCwBSmUKHfMz91ju_Kqxx0XgTGmdqX9EXE0Lxg25Hp9Hst6jtGnN675uFw2jgTE5HxQIrOjGhjaamnPY-y6ZHS_pm2jXcrOr1JTlbGhfw6pi75HU0nA8eo8nzw3hwN4mskHHdPiUyhYwZIYyMEy4RgSNYkzIWWy4SsKniMkdlrGBxztqeUhmqNAGGMYguuTnc3Vb-u8FQ67IIFp0zG_RN0ExxyITcq3QJP4zayodQ4VJvq6I01U4z0HtI_Q-p95D6CCn-ADd6ZK0</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1520934058</pqid></control><display><type>article</type><title>Topological-Insulator Passively Q-Switched Double-Clad Fiber Laser at 2 $\mu$ m Wavelength</title><source>IEEE Electronic Library (IEL)</source><creator>Luo, Zhengqian ; Liu, Chun ; Huang, Yizhong ; Wu, Duanduan ; Wu, Jianyu ; Xu, Huiying ; Cai, Zhiping ; Lin, Zhiqin ; Sun, Liping ; Weng, Jian</creator><creatorcontrib>Luo, Zhengqian ; Liu, Chun ; Huang, Yizhong ; Wu, Duanduan ; Wu, Jianyu ; Xu, Huiying ; Cai, Zhiping ; Lin, Zhiqin ; Sun, Liping ; Weng, Jian</creatorcontrib><description>In this paper, Topological insulator (TI) Bi 2 Se 3 as a saturable absorber (SA) is exploited to Q-switch fiber lasers at 2 mu m wavelength for the first time. Few-layer TI:Bi 2 Se 3 nanosheets in CS-HAc solution are prepared by the liquid-phase exfoliation method, and the thin 2-D structure with the thickness of 3-5 layers is well characterized. The open-aperture Z-scan experiment shows that the few-layer TI:Bi 2 Se 3 has the saturable optical intensity of 41 MW/cm 2 at 800 nm and the modulation depth of 3.7%. The optical deposition technique is used to efficiently assemble the TI:Bi 2 Se 3 nanosheets in the solution onto a fiber ferrule, therefore constructing a fiber-compatible TI-based SA (FC-TISA). By further inserting the FC-TISA into a diode-pumped Tm 3 + -doped double-clad fiber laser (TM-DCFL), stable Q-switching operation at 1.98 mu m is successfully achieved with the shortest pulse width of 4.18 mu s and the tunable repetition rate from 8.4 to 26.8 kHz. In particular, the TM-DCFL can deliver large-energy Q-switched pulses with the pulse energy as high as 313 nJ (corresponding to average output power of 8.4 mW). Our results suggest that TI-based SA is suitable for pulsed laser operation in the eye-safe region of 2 mu m, and potentially develops as an ultra-broadband photonics device.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2014.2305834</identifier><language>eng</language><subject>Deposition ; Fiber lasers ; Modulation ; Nanostructure ; Optical fibers ; Pulsed lasers ; Titanium ; Wavelengths</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2014-09, Vol.20 (5), p.1-8</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-26395e11a33a46724ee02e0ca8116c2370c8524de5ac316d1e0c559e58701e603</citedby><cites>FETCH-LOGICAL-c346t-26395e11a33a46724ee02e0ca8116c2370c8524de5ac316d1e0c559e58701e603</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Luo, Zhengqian</creatorcontrib><creatorcontrib>Liu, Chun</creatorcontrib><creatorcontrib>Huang, Yizhong</creatorcontrib><creatorcontrib>Wu, Duanduan</creatorcontrib><creatorcontrib>Wu, Jianyu</creatorcontrib><creatorcontrib>Xu, Huiying</creatorcontrib><creatorcontrib>Cai, Zhiping</creatorcontrib><creatorcontrib>Lin, Zhiqin</creatorcontrib><creatorcontrib>Sun, Liping</creatorcontrib><creatorcontrib>Weng, Jian</creatorcontrib><title>Topological-Insulator Passively Q-Switched Double-Clad Fiber Laser at 2 $\mu$ m Wavelength</title><title>IEEE journal of selected topics in quantum electronics</title><description>In this paper, Topological insulator (TI) Bi 2 Se 3 as a saturable absorber (SA) is exploited to Q-switch fiber lasers at 2 mu m wavelength for the first time. Few-layer TI:Bi 2 Se 3 nanosheets in CS-HAc solution are prepared by the liquid-phase exfoliation method, and the thin 2-D structure with the thickness of 3-5 layers is well characterized. The open-aperture Z-scan experiment shows that the few-layer TI:Bi 2 Se 3 has the saturable optical intensity of 41 MW/cm 2 at 800 nm and the modulation depth of 3.7%. The optical deposition technique is used to efficiently assemble the TI:Bi 2 Se 3 nanosheets in the solution onto a fiber ferrule, therefore constructing a fiber-compatible TI-based SA (FC-TISA). By further inserting the FC-TISA into a diode-pumped Tm 3 + -doped double-clad fiber laser (TM-DCFL), stable Q-switching operation at 1.98 mu m is successfully achieved with the shortest pulse width of 4.18 mu s and the tunable repetition rate from 8.4 to 26.8 kHz. In particular, the TM-DCFL can deliver large-energy Q-switched pulses with the pulse energy as high as 313 nJ (corresponding to average output power of 8.4 mW). Our results suggest that TI-based SA is suitable for pulsed laser operation in the eye-safe region of 2 mu m, and potentially develops as an ultra-broadband photonics device.</description><subject>Deposition</subject><subject>Fiber lasers</subject><subject>Modulation</subject><subject>Nanostructure</subject><subject>Optical fibers</subject><subject>Pulsed lasers</subject><subject>Titanium</subject><subject>Wavelengths</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNot0EtPAjEQAODGaCKif8BTDxy8LE5f-zgaBMWQKAGjMSZN6Q6wpktxu6vh37sIl5lJ5pHJR8g1gz5jkN0-zebTYZ8Dk30uQKVCnpAOUyqNpJL8tK0hSSIew_s5uQjhCwBSmUKHfMz91ju_Kqxx0XgTGmdqX9EXE0Lxg25Hp9Hst6jtGnN675uFw2jgTE5HxQIrOjGhjaamnPY-y6ZHS_pm2jXcrOr1JTlbGhfw6pi75HU0nA8eo8nzw3hwN4mskHHdPiUyhYwZIYyMEy4RgSNYkzIWWy4SsKniMkdlrGBxztqeUhmqNAGGMYguuTnc3Vb-u8FQ67IIFp0zG_RN0ExxyITcq3QJP4zayodQ4VJvq6I01U4z0HtI_Q-p95D6CCn-ADd6ZK0</recordid><startdate>201409</startdate><enddate>201409</enddate><creator>Luo, Zhengqian</creator><creator>Liu, Chun</creator><creator>Huang, Yizhong</creator><creator>Wu, Duanduan</creator><creator>Wu, Jianyu</creator><creator>Xu, Huiying</creator><creator>Cai, Zhiping</creator><creator>Lin, Zhiqin</creator><creator>Sun, Liping</creator><creator>Weng, Jian</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>201409</creationdate><title>Topological-Insulator Passively Q-Switched Double-Clad Fiber Laser at 2 $\mu$ m Wavelength</title><author>Luo, Zhengqian ; Liu, Chun ; Huang, Yizhong ; Wu, Duanduan ; Wu, Jianyu ; Xu, Huiying ; Cai, Zhiping ; Lin, Zhiqin ; Sun, Liping ; Weng, Jian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-26395e11a33a46724ee02e0ca8116c2370c8524de5ac316d1e0c559e58701e603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Deposition</topic><topic>Fiber lasers</topic><topic>Modulation</topic><topic>Nanostructure</topic><topic>Optical fibers</topic><topic>Pulsed lasers</topic><topic>Titanium</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, Zhengqian</creatorcontrib><creatorcontrib>Liu, Chun</creatorcontrib><creatorcontrib>Huang, Yizhong</creatorcontrib><creatorcontrib>Wu, Duanduan</creatorcontrib><creatorcontrib>Wu, Jianyu</creatorcontrib><creatorcontrib>Xu, Huiying</creatorcontrib><creatorcontrib>Cai, Zhiping</creatorcontrib><creatorcontrib>Lin, Zhiqin</creatorcontrib><creatorcontrib>Sun, Liping</creatorcontrib><creatorcontrib>Weng, Jian</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luo, Zhengqian</au><au>Liu, Chun</au><au>Huang, Yizhong</au><au>Wu, Duanduan</au><au>Wu, Jianyu</au><au>Xu, Huiying</au><au>Cai, Zhiping</au><au>Lin, Zhiqin</au><au>Sun, Liping</au><au>Weng, Jian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Topological-Insulator Passively Q-Switched Double-Clad Fiber Laser at 2 $\mu$ m Wavelength</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><date>2014-09</date><risdate>2014</risdate><volume>20</volume><issue>5</issue><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><abstract>In this paper, Topological insulator (TI) Bi 2 Se 3 as a saturable absorber (SA) is exploited to Q-switch fiber lasers at 2 mu m wavelength for the first time. Few-layer TI:Bi 2 Se 3 nanosheets in CS-HAc solution are prepared by the liquid-phase exfoliation method, and the thin 2-D structure with the thickness of 3-5 layers is well characterized. The open-aperture Z-scan experiment shows that the few-layer TI:Bi 2 Se 3 has the saturable optical intensity of 41 MW/cm 2 at 800 nm and the modulation depth of 3.7%. The optical deposition technique is used to efficiently assemble the TI:Bi 2 Se 3 nanosheets in the solution onto a fiber ferrule, therefore constructing a fiber-compatible TI-based SA (FC-TISA). By further inserting the FC-TISA into a diode-pumped Tm 3 + -doped double-clad fiber laser (TM-DCFL), stable Q-switching operation at 1.98 mu m is successfully achieved with the shortest pulse width of 4.18 mu s and the tunable repetition rate from 8.4 to 26.8 kHz. In particular, the TM-DCFL can deliver large-energy Q-switched pulses with the pulse energy as high as 313 nJ (corresponding to average output power of 8.4 mW). Our results suggest that TI-based SA is suitable for pulsed laser operation in the eye-safe region of 2 mu m, and potentially develops as an ultra-broadband photonics device.</abstract><doi>10.1109/JSTQE.2014.2305834</doi><tpages>8</tpages></addata></record> |
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subjects | Deposition Fiber lasers Modulation Nanostructure Optical fibers Pulsed lasers Titanium Wavelengths |
title | Topological-Insulator Passively Q-Switched Double-Clad Fiber Laser at 2 $\mu$ m Wavelength |
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