Growth mechanism of anodic tantalum pentoxide formed in phosphoric acid

The formation of anodic tantalum oxide (Ta2O5) in dilute phosphoric acid is quantitatively described using point defect chemistry reactions. Oxide formed in phosphoric acid has a distinct bi-layer structure, where the inner layer is pure Ta2O5, but the outer layer contains phosphate incorporated fro...

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Veröffentlicht in:Electrochimica acta 2013-01, Vol.87, p.82-91
Hauptverfasser: Sloppy, J.D., Lu, Z., Dickey, E.C., Macdonald, D.D.
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Sprache:eng
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