Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection

[Display omitted] •Schottky diodes on epitaxial germanium grown on SOI substrate were fabricated.•T-Gate technology was implemented on epitaxial germanium.•T-shaped Schottky anode fabricated has footprint width below 400nm.•Electrical characterization shows a good rectifying behavior.•Ideality facto...

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Veröffentlicht in:	Microelectronic engineering 2013-10, Vol.110, p.470-473
Hauptverfasser:	Bagni, R., Giovine, E., Carta, S., Di Gaspare, A., Casini, R., Ortolani, M., Foglietti, V., Evangelisti, F., Notargiacomo, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Air bridge technology Cross sections Electrical junctions Electrical properties Electronics Epitaxy Footprints Germanium Schottky diode Schottky diodes THz detector
Online-Zugang:	Volltext
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