Fabrication of sub-wavelength structures on silicon dioxide

In this reported work, nanosphere lithography (NSL) and inductively coupled plasma reactive ion etching (ICP-RIE) are combined to successfully fabricate a sub-wavelength structure (SWS) on a glass substrate, achieving broadband antireflection and increasing the transmittance of incident light throug...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Micro & nano letters 2013-10, Vol.8 (10), p.637-640
Hauptverfasser:	Huang, Mao-Jung, Tang, Yu-Hsiang, Su, Jien-Yin, Chu, Nien-Nan, Shiao, Ming-Hua, Hsiao, Chien-Nan
Format:	Artikel
Sprache:	eng
Schlagworte:	antireflection coatings Arrays blank glass Broadband broadband antireflection etched surface fabrication technology Glass glass substrate Gold gold layer incident light transmittance inductively coupled plasma reactive ion etching infrared spectra insulated window mean reflectance mean transmittance nanodot array structure nanofabrication nanolithography nanosphere lithography Nanostructure nanostructured materials Reflectance Reflectivity silicon dioxide SiO2 size 180 nm size 200 A size 50 nm Special Section: Expanded Papers from NEMS 2013 sputter etching subwavelength structure fabrication subwavelength structure surfaces time 3 min time 30 s Transmittance visible light visible spectra wavelength 400 nm to 950 nm
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!